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Results: 1-13 |
Results: 13
SURFACE FLASHOVER EFFECTS IN ALGAN GAN HFETS
Authors: SUDARSHAN TS GRADINARU G YANG J KHAN MA
Citation: Ts. Sudarshan et al., SURFACE FLASHOVER EFFECTS IN ALGAN GAN HFETS, Electronics Letters, 34(9), 1998, pp. 927-928
PREBREAKDOWN AND BREAKDOWN EFFECTS IN ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/
Authors: GRADINARU G KHAN MA KAO NC SUDARSHAN TS CHEN Q YANG J
Citation: G. Gradinaru et al., PREBREAKDOWN AND BREAKDOWN EFFECTS IN ALGAN GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, Applied physics letters, 72(12), 1998, pp. 1475-1477
HIGH-FIELD HIGH-TEMPERATURE PERFORMANCE OF SEMIINSULATING SILICON-CARBIDE
Authors: SUDARSHAN TS GRADINARU G KORONY G GRADINARU SA MITCHEL W
Citation: Ts. Sudarshan et al., HIGH-FIELD HIGH-TEMPERATURE PERFORMANCE OF SEMIINSULATING SILICON-CARBIDE, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1392-1395
ELECTRICAL-PROPERTIES OF HIGH-RESISTIVITY 6H-SIC UNDER HIGH TEMPERATURE HIGH FIELD STRESS/
Authors: GRADINARU G SUDARSHAN TS GRADINARU SA MITCHELL W HOBGOOD HM
Citation: G. Gradinaru et al., ELECTRICAL-PROPERTIES OF HIGH-RESISTIVITY 6H-SIC UNDER HIGH TEMPERATURE HIGH FIELD STRESS/, Applied physics letters, 70(6), 1997, pp. 735-737
HIGH-FIELD ACTIVATION OF MICROPIPES IN HIGH-RESISTIVITY SILICON-CARBIDE
Authors: SUDARSHAN TS GRADINARU G KORONY G MITCHEL W HOPKINS RH
Citation: Ts. Sudarshan et al., HIGH-FIELD ACTIVATION OF MICROPIPES IN HIGH-RESISTIVITY SILICON-CARBIDE, Journal of electronic materials, 25(5), 1996, pp. 893-898
SURFACE FILAMENTATION IN SEMIINSULATING SILICON
Authors: GRADINARU G SUDARSHAN TS
Citation: G. Gradinaru et Ts. Sudarshan, SURFACE FILAMENTATION IN SEMIINSULATING SILICON, Journal of applied physics, 79(11), 1996, pp. 8557-8564
INFLUENCE OF CONTACT ARCHITECTURE ON THE HIGH-FIELD CHARACTERISTICS OF PLANAR SILICON STRUCTURES
Authors: MADANGARLI VP KORONY G GRADINARU G SUDARSHAN TS
Citation: Vp. Madangarli et al., INFLUENCE OF CONTACT ARCHITECTURE ON THE HIGH-FIELD CHARACTERISTICS OF PLANAR SILICON STRUCTURES, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 793-799
HIGH-FIELD FLASHOVER STRENGTH OF INTRINSIC GALLIUM NITRIDE AND ALUMINUM NITRIDE IN VACUUM
Authors: KHAN MA CHEN O SUDARSHAN TS GRADINARU G
Citation: Ma. Khan et al., HIGH-FIELD FLASHOVER STRENGTH OF INTRINSIC GALLIUM NITRIDE AND ALUMINUM NITRIDE IN VACUUM, Applied physics letters, 69(2), 1996, pp. 254-256
BULK BREAKDOWN OF HIGH-FIELD SILICON-DIELECTRIC SYSTEMS
Authors: GRADINARU G SUDARSHAN TS
Citation: G. Gradinaru et Ts. Sudarshan, BULK BREAKDOWN OF HIGH-FIELD SILICON-DIELECTRIC SYSTEMS, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1156-1165
HIGH-FIELD EFFECTS IN HIGH-RESISTIVITY SILICON-CARBIDE IN LATERAL CONFIGURATIONS
Authors: SUDARSHAN TS GRADINARU G KORONY G MITCHEL W HOPKINS RH
Citation: Ts. Sudarshan et al., HIGH-FIELD EFFECTS IN HIGH-RESISTIVITY SILICON-CARBIDE IN LATERAL CONFIGURATIONS, Applied physics letters, 67(23), 1995, pp. 3435-3437
THE INFLUENCE OF THE SEMICONDUCTOR AND DIELECTRIC-PROPERTIES ON SURFACE FLASHOVER IN SILICON-DIELECTRIC SYSTEMS
Authors: GRADINARU G MADANGARLI VP SUDARSHAN TS
Citation: G. Gradinaru et al., THE INFLUENCE OF THE SEMICONDUCTOR AND DIELECTRIC-PROPERTIES ON SURFACE FLASHOVER IN SILICON-DIELECTRIC SYSTEMS, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1233-1238
PREBREAKDOWN AND BREAKDOWN PHENOMENA IN HIGH-FIELD SEMICONDUCTOR-DIELECTRIC SYSTEMS
Authors: GRADINARU G SUDARSHAN TS
Citation: G. Gradinaru et Ts. Sudarshan, PREBREAKDOWN AND BREAKDOWN PHENOMENA IN HIGH-FIELD SEMICONDUCTOR-DIELECTRIC SYSTEMS, Journal of applied physics, 73(11), 1993, pp. 7643-7666
SURFACE FLASHOVER IN SILICON-VACUUM SYSTEMS
Authors: GRADINARU G MADANGARLI VP SUDARSHAN TS
Citation: G. Gradinaru et al., SURFACE FLASHOVER IN SILICON-VACUUM SYSTEMS, IEEE transactions on electrical insulation, 28(4), 1993, pp. 555-565
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