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STUDY OF STRAIN AND DISORDER OF INXGA1-XP (GAAS, GRADED GAP) LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.8) USING SPECTROSCOPIC ELLIPSOMETRY AND RAMAN-SPECTROSCOPY
Authors: LEE H BISWAS D KLEIN MV MORKOC H ASPNES DE CHOE BD KIM J GRIFFITHS CO
Citation: H. Lee et al., STUDY OF STRAIN AND DISORDER OF INXGA1-XP (GAAS, GRADED GAP) LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.8) USING SPECTROSCOPIC ELLIPSOMETRY AND RAMAN-SPECTROSCOPY, Journal of applied physics, 75(10), 1994, pp. 5040-5051
DEPTH PROFILES OF STRAIN IN IN0.10GA0.90AS GAAS MULTIQUANTUM-WELL STRUCTURES OBTAINED BY VARIABLE-PUMP WAVELENGTH PHOTOLUMINESCENCE/
Authors: GRIFFITHS CO COOPER SL KLEIN MV FORBES DV COLEMAN JJ
Citation: Co. Griffiths et al., DEPTH PROFILES OF STRAIN IN IN0.10GA0.90AS GAAS MULTIQUANTUM-WELL STRUCTURES OBTAINED BY VARIABLE-PUMP WAVELENGTH PHOTOLUMINESCENCE/, Applied physics letters, 63(15), 1993, pp. 2123-2125
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