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Citation: Aa. Grinberg et Sk. Sputz, THRESHOLD-LIKE BEHAVIOR OF PHOTOLUMINESCENCE IN LASER HETEROSTRUCTUREWAFERS, Journal of applied physics, 82(8), 1997, pp. 4006-4012
Citation: Aa. Grinberg, STATISTICS AND POWER SPECTRUM OF THE ELECTRON FLUCTUATIONS IN SEMICONDUCTORS, Physical review. B, Condensed matter, 51(3), 1995, pp. 1517-1526
Citation: Mm. Dignam et Aa. Grinberg, SOLUTION OF THE BOLTZMANN TRANSPORT-EQUATION IN AN ARBITRARY ONE-DIMENSIONAL-POTENTIAL PROFILE, Physical review. B, Condensed matter, 50(7), 1994, pp. 4345-4354
Citation: Aa. Grinberg, THERMIONIC-TUNNELING-DIFFUSION MODEL OF THE LASER CURRENT-VOLTAGE ANDPOWER CHARACTERISTICS, Journal of applied physics, 75(12), 1994, pp. 7669-7680
Citation: Aa. Grinberg, APPROXIMATE DEPENDENCE OF THE SPONTANEOUS EMISSION RATE ON ELECTRON AND HOLE CONCENTRATIONS, IEEE journal of quantum electronics, 30(5), 1994, pp. 1151-1155
Citation: Aa. Grinberg et S. Luryi, ON THE THERMIONIC-DIFFUSION THEORY OF MINORITY TRANSPORT IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 859-866
Citation: S. Luryi et al., HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH ENHANCED FORWARD DIFFUSION OFMINORITY-CARRIERS, Applied physics letters, 63(11), 1993, pp. 1537-1539