Citation: Cl. Huang et Gj. Grula, DEGRADATION CHARACTERISTICS OF STI AND MESA-ISOLATED THIN-FILM SOI CMOS, IEEE electron device letters, 18(10), 1997, pp. 474-476
Citation: Ss. Cooperman et al., OPTIMIZATION OF A SHALLOW TRENCH ISOLATION PROCESS FOR IMPROVED PLANARIZATION, Journal of the Electrochemical Society, 142(9), 1995, pp. 3180-3185