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Authors: GUILHALMENC C MORICEAU H ASPAR B AUBERTONHERVE AJ LAMURE JM
Citation: C. Guilhalmenc et al., CHARACTERIZATION BY ATOMIC-FORCE MICROSCOPY OF THE SOI LAYER TOPOGRAPHY IN LOW-DOSE SIMOX MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 29-32

Authors: PRIEUR E GUILHALMENC C HARTWIG J OHLER M GARCIA A ASPAR B
Citation: E. Prieur et al., THREADING DISLOCATIONS IN SILICON LAYER PRODUCED BY SEPARATION BY IMPLANTED OXYGEN PROCESS, Journal of applied physics, 80(4), 1996, pp. 2113-2120

Authors: ASPAR B GUILHALMENC C PUDDA C GARCIA A PAPON AM AUBERTONHERVE AJ LAMURE JM
Citation: B. Aspar et al., BURIED OXIDE LAYERS FORMED BY LOW-DOSE SIMOX PROCESSES, Microelectronic engineering, 28(1-4), 1995, pp. 411-414
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