BURIED OXIDE LAYERS FORMED BY LOW-DOSE SIMOX PROCESSES

Authors
ASPAR B GUILHALMENC C PUDDA C GARCIA A PAPON AM AUBERTONHERVE AJ LAMURE JM
Citation
B. Aspar et al., BURIED OXIDE LAYERS FORMED BY LOW-DOSE SIMOX PROCESSES, Microelectronic engineering, 28(1-4), 1995, pp. 411-414
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
411 - 414
Database
ISI
SICI code
0167-9317(1995)28:1-4<411:BOLFBL>2.0.ZU;2-T