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Results:
1-11
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Results: 11
Authors:
MCNEVIN SC
GUINN KV
TAYLOR JA
Citation: Sc. Mcnevin et al., CHEMICAL CHALLENGE OF SUBMICRON OXIDE ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 214-220
Authors:
GUINN KV
RHOADES DS
HERZ RK
Citation: Kv. Guinn et al., THERMAL-DESORPTION OVER WIDE PRESSURE RANGES APPLIED TO CHARACTERIZATION OF EQUILIBRIUM ADSORPTION OF CO OVER PT, Surface science, 393(1-3), 1997, pp. 47-63
Authors:
LEE JTC
LAYADI N
GUINN KV
MAYNARD HL
KLEMENS FP
IBBOTSON DE
TEPERMEISTER I
EGAN PO
RICHARDSON RA
Citation: Jtc. Lee et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2510-2518
Authors:
CHENG CC
GUINN KV
DONNELLY VM
Citation: Cc. Cheng et al., MECHANISM FOR ANISOTROPIC ETCHING OF PHOTORESIST-MASKED, POLYCRYSTALLINE SILICON IN HBR PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 85-90
Authors:
DONNELLY VM
HERMAN IP
CHENG CC
GUINN KV
Citation: Vm. Donnelly et al., SURFACE-CHEMISTRY DURING PLASMA-ETCHING OF SILICON, Pure and applied chemistry, 68(5), 1996, pp. 1071-1074
Authors:
GUINN KV
CHENG CC
DONNELLY VM
Citation: Kv. Guinn et al., QUANTITATIVE CHEMICAL TOPOGRAPHY OF POLYCRYSTALLINE SI ANISOTROPICALLY ETCHED IN CL-2 O-2 HIGH-DENSITY PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 214-226
Authors:
CHENG CC
GUINN KV
HERMAN IP
DONNELLY VM
Citation: Cc. Cheng et al., COMPETITIVE HALOGENATION OF SILICON SURFACES IN HBR CL-2 PLASMAS STUDIED RAY PHOTOELECTRON-SPECTROSCOPY AND IN-SITU, REAL-TIME, PULSED LASER-INDUCED THERMAL-DESORPTION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 1970-1976
Authors:
CHENG CC
GUINN KV
DONNELLY VM
HERMAN IP
Citation: Cc. Cheng et al., IN-SITU PULSED LASER-INDUCED THERMAL-DESORPTION STUDIES OF THE SILICON CHLORIDE SURFACE-LAYER DURING SILICON ETCHING IN HIGH-DENSITY PLASMAS OF CL2 AND CL2 O2 MIXTURES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(5), 1994, pp. 2630-2640
Authors:
HERMAN IP
DONNELLY VM
GUINN KV
CHENG CC
Citation: Ip. Herman et al., LASER-INDUCED THERMAL-DESORPTION AS AN IN-SITU SURFACE PROBE DURING PLASMA PROCESSING, Physical review letters, 72(17), 1994, pp. 2801-2804
Authors:
GUINN KV
DONNELLY VM
Citation: Kv. Guinn et Vm. Donnelly, CHEMICAL TOPOGRAPHY OF ANISOTROPIC ETCHING OF POLYCRYSTALLINE SI MASKED WITH PHOTORESIST, Journal of applied physics, 75(4), 1994, pp. 2227-2234
Authors:
GUINN KV
DONNELLY VM
GROSS ME
BAIOCCHI FA
PETROV I
GREENE JE
Citation: Kv. Guinn et al., DECOMPOSITION OF HEXAFLUOROACETYLACETONATE CU(I) VINYLTRIMETHYLSILANEON, AND DIFFUSION OF CU INTO SINGLE-CRYSTAL AND POLYCRYSTALLINE TITANIUM NITRIDE, Surface science, 295(1-2), 1993, pp. 219-229
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1-11
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