QUANTITATIVE CHEMICAL TOPOGRAPHY OF POLYCRYSTALLINE SI ANISOTROPICALLY ETCHED IN CL-2 O-2 HIGH-DENSITY PLASMAS/

Authors
GUINN KV CHENG CC DONNELLY VM
Citation
Kv. Guinn et al., QUANTITATIVE CHEMICAL TOPOGRAPHY OF POLYCRYSTALLINE SI ANISOTROPICALLY ETCHED IN CL-2 O-2 HIGH-DENSITY PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 214-226
Citations number
39
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
2
Year of publication
1995
Pages
214 - 226
Database
ISI
SICI code
1071-1023(1995)13:2<214:QCTOPS>2.0.ZU;2-Y