Authors:
YUAN C
SALAGAJ T
GURARY A
THOMPSON AG
KROLL W
STALL RA
HWANG CY
SCHURMAN M
LI Y
MAYO WE
LU Y
KRISHNANKUTTY S
SHMAGIN IK
KOLBAS RM
PEARTON SJ
Citation: C. Yuan et al., INVESTIGATION OF N-TYPE AND P-TYPE DOPING OF GAN DURING EPITAXIAL-GROWTH IN A MASS-PRODUCTION SCALE MULTIWAFER-ROTATING-DISK REACTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2075-2080
Authors:
YUAN C
SALAGAJ T
GURARY A
ZAWADZKI P
CHERN CS
KROLL W
STALL RA
LI Y
SCHURMAN M
HWANG CY
MAYO WE
LU Y
PEARTON SJ
KRISHNANKUTTY S
KOLBAS RM
Citation: C. Yuan et al., HIGH-QUALITY P-TYPE GAN DEPOSITION ON C-SAPPHIRE SUBSTRATES IN A MULTIWAFER ROTATING-DISK REACTOR, Journal of the Electrochemical Society, 142(9), 1995, pp. 163-165
Authors:
TOMPA GS
BREILAND WG
GURARY A
ZAWADZKI PA
EVANS GH
ESHERICK P
KROLL B
STALL RA
Citation: Gs. Tompa et al., LARGE-AREA, PRODUCTION MOCVD ROTATING-DISK REACTOR DEVELOPMENT AND CHARACTERISTICS, Microelectronics, 25(8), 1994, pp. 757-765