Authors:
Wehrspohn, RB
Deane, SC
French, ID
Gale, I
Hewett, J
Powell, MJ
Robertson, J
Citation: Rb. Wehrspohn et al., Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors, J APPL PHYS, 87(1), 2000, pp. 144-154