Authors:
Davydov, A
Chumakov, N
Aronzon, B
Vedeneev, A
Bakaushin, D
Galibert, J
Leotin, J
Citation: A. Davydov et al., Experimental study of saddle point conductance in strongly disordered Si-metal nitride oxide semiconductor structure at high magnetic fields, PHYSICA B, 298(1-4), 2001, pp. 491-495
Authors:
Ferrus, T
Goutiers, B
Galibert, J
Ressier, L
Peyrade, JP
Citation: T. Ferrus et al., GaAs delta-doped quantum wire superlattice characterization by quantum Hall effect and Shubniltov-de Haas oscillations, SUPERLATT M, 29(2), 2001, pp. 99-104
Citation: L. Essaleh et al., Effect of impurity band conduction on the electrical characteristics of n-type CuInSe2, J APPL PHYS, 90(8), 2001, pp. 3993-3997
Authors:
Rincon, C
Wasim, SM
Marin, G
Hernandez, E
Perez, GS
Galibert, J
Citation: C. Rincon et al., Photoluminescence, infrared reflectivity, and Raman spectra of the orderedvacancy compound CuGa3Se5, J APPL PHYS, 87(5), 2000, pp. 2293-2296
Authors:
Iqbal, M
Galibert, J
Leotin, J
Waffenschmidt, S
Von Lohneysen, H
Citation: M. Iqbal et al., Magnetic-field induced crossover from Efros-Shklovskii to Mott variable range hopping in Si :(P,B), PHIL MAG B, 79(10), 1999, pp. 1591-1601