Authors:
Danailov, DM
Pfandzelter, R
Igel, T
Winter, H
Gartner, K
Citation: Dm. Danailov et al., Test of the interatomic potential in the eV-region by glancing-angle scattering of He-atoms from Fe(001), APPL SURF S, 171(1-2), 2001, pp. 113-119
Authors:
Danailov, D
Pfandzelter, R
Igel, T
Winter, H
Gartner, K
Citation: D. Danailov et al., Deduction of the He-Fe interaction potential in eV-range from experimentaldata by computer simulation in grazing ion-surface scattering: Row-model, NUCL INST B, 180, 2001, pp. 265-273
Citation: K. Gartner et B. Weber, Simulation of ion beam induced crystallization and amorphization in (001) silicon, NUCL INST B, 180, 2001, pp. 274-279
Citation: B. Weber et K. Gartner, The role of point defects in ion beam induced crystallization of silicon investigated by molecular dynamics simulations, NUCL INST B, 175, 2001, pp. 119-124
Authors:
Schenk, O
Gartner, K
Fichtner, W
Stricker, A
Citation: O. Schenk et al., PARDISO: a high-performance serial and parallel sparse linear solver in semiconductor device simulation, FUT GENER C, 18(1), 2001, pp. 69-78
Citation: Dm. Stock et al., Role of the bond defect for structural transformations between crystallineand amorphous silicon: A molecular-dynamics study, PHYS REV B, 61(12), 2000, pp. 8150-8154
Citation: B. Weber et al., Defect-related growth processes at an amorphous/crystalline interface: a molecular dynamics study, MAT SCI E B, 71, 2000, pp. 213-218
Authors:
Hahn, M
Gartner, K
Zechmeister-Boltenstern, S
Citation: M. Hahn et al., Greenhouse gas emissions (N2O, CO2 and CH4) from three forest soils near Vienna (Austria) with different water and nitrogen regimes, BODENKULTUR, 51(2), 2000, pp. 115-125
Citation: D. Danailov et al., Computer simulation of the reflection of energetic ions from crystal surfaces at glancing incidence, NUCL INST B, 153(1-4), 1999, pp. 191-198
Citation: B. Weber et al., MD simulations of ion beam induced epitaxial crystallization at a-Si/c-Si interfaces: interface structure and elementary processes of crystallization, NUCL INST B, 148(1-4), 1999, pp. 375-380