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Results: 1-2 |
Results: 2
Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs
Authors: Farahmand, M Brennan, KF Gebara, E Heo, D Suh, Y Laskar, J
Citation: M. Farahmand et al., Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs, IEEE DEVICE, 48(9), 2001, pp. 1844-1849
An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling
Authors: Heo, D Gebara, E Chen, UJE Yoo, SY Hamai, M Suh, Y Laskar, J
Citation: D. Heo et al., An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling, IEEE MICR T, 48(12), 2000, pp. 2361-2369
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