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Results: 1-19 |
Results: 19
Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates
Authors: Davis, RF Gehrke, T Linthicum, KJ Rajagopal, P Roskowski, AM Zheleva, T Preble, EA Zorman, CA Mehregany, M Schwarz, U Schuck, J Grober, R
Citation: Rf. Davis et al., Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates, MRS I J N S, 6(14), 2001, pp. 1-16
(Bio) chemistry of bacterial leaching - direct vs. indirect bioleaching
Authors: Sand, W Gehrke, T Jozsa, PG Schippers, A
Citation: W. Sand et al., (Bio) chemistry of bacterial leaching - direct vs. indirect bioleaching, HYDROMETALL, 59(2-3), 2001, pp. 159-175
The EPS of Acidithiobacillus ferrooxidans - a model for structure-functionrelationships of attached bacteria and their physiology
Authors: Gehrke, T Hallmann, R Kinzler, K Sand, W
Citation: T. Gehrke et al., The EPS of Acidithiobacillus ferrooxidans - a model for structure-functionrelationships of attached bacteria and their physiology, WATER SCI T, 43(6), 2001, pp. 159-167
Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates
Authors: Davis, RF Gehrke, T Linthicum, KJ Zheleva, TS Rajagopal, P Zorman, CA Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates, Z METALLKUN, 92(2), 2001, pp. 163-166
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
Authors: Davis, RF Gehrke, T Linthicum, KJ Preble, E Rajagopal, P Ronning, C Zorman, C Mehregany, M
Citation: Rf. Davis et al., Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates, J CRYST GR, 231(3), 2001, pp. 335-341
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
Authors: Davis, RF Gehrke, T Linthicum, KJ Zheleva, TS Preble, EA Rajagopal, P Zorman, CA Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization, J CRYST GR, 225(2-4), 2001, pp. 134-140
Combination of reduced oxygen tension and intermittent hydrostatic pressure: a useful tool in articular cartilage tissue engineering
Authors: Hansen, U Schunke, M Domm, C Ioannidis, N Hassenpflug, J Gehrke, T Kurz, B
Citation: U. Hansen et al., Combination of reduced oxygen tension and intermittent hydrostatic pressure: a useful tool in articular cartilage tissue engineering, J BIOMECHAN, 34(7), 2001, pp. 941-949
Pharmacokinetic study of a gentamicin/clindamicin bone cement used in one-stage revision arthroplasty
Authors: Gehrke, T von Forster, G Frommelt, L
Citation: T. Gehrke et al., Pharmacokinetic study of a gentamicin/clindamicin bone cement used in one-stage revision arthroplasty, BONE CEMENTS AND CEMENTING TECHNIQUE, 2001, pp. 127-134
Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates
Authors: Davis, RF Gehrke, T Linthicum, KJ Zheleva, TS Rajagopal, P Zorman, CA Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates, MRS I J N S, 5, 2000, pp. NIL_46-NIL_57
Advanced PENDEOEPITAXY (TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition
Authors: Gehrke, T Linthicum, KJ Rajagopal, P Preble, EA Davis, RF
Citation: T. Gehrke et al., Advanced PENDEOEPITAXY (TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition, MRS I J N S, 5, 2000, pp. NIL_64-NIL_69
Photoluminescence characterization of Mg implanted GaN
Authors: Ronning, C Hofsass, H Stotzler, A Deicher, M Carlson, EP Hartlieb, PJ Gehrke, T Rajagopal, P Davis, RF
Citation: C. Ronning et al., Photoluminescence characterization of Mg implanted GaN, MRS I J N S, 5, 2000, pp. NIL_622-NIL_628
Evaluation of water content by spatially resolved transverse relaxation times of human articular cartilage
Authors: Lusse, S Claassen, H Gehrke, T Hassenpflug, J Schunke, M Heller, M Gluer, CC
Citation: S. Lusse et al., Evaluation of water content by spatially resolved transverse relaxation times of human articular cartilage, MAGN RES IM, 18(4), 2000, pp. 423-430
Pendeo-epitaxial growth of gallium nitride on silicon substrates
Authors: Gehrke, T Linthicum, KJ Preble, E Rajagopal, P Ronning, C Zorman, C Mehregany, M Davis, RF
Citation: T. Gehrke et al., Pendeo-epitaxial growth of gallium nitride on silicon substrates, J ELEC MAT, 29(3), 2000, pp. 306-310
Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates
Authors: Liaw, HM Doyle, R Fejes, PL Zollner, S Konkar, A Linthicum, KJ Gehrke, T Davis, RF
Citation: Hm. Liaw et al., Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates, SOL ST ELEC, 44(4), 2000, pp. 747-755
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
Authors: Ronning, C Dalmer, M Uhrmacher, M Restle, M Vetter, U Ziegeler, L Hofsass, H Gehrke, T Jarrendahl, K Davis, RF
Citation: C. Ronning et al., Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery, J APPL PHYS, 87(5), 2000, pp. 2149-2157
Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN
Authors: Hanser, AD Nam, OH Bremser, MD Thomson, DB Gehrke, T Zheleva, TS Davis, RF
Citation: Ad. Hanser et al., Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN, DIAM RELAT, 8(2-5), 1999, pp. 288-294
Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism forlow defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces
Authors: Therrien, R Niimi, H Gehrke, T Lucovsky, G Davis, R
Citation: R. Therrien et al., Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism forlow defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces, MICROEL ENG, 48(1-4), 1999, pp. 303-306
Pendeoepitaxy of gallium nitride thin films
Authors: Linthicum, K Gehrke, T Thomson, D Carlson, E Rajagopal, P Smith, T Batchelor, D Davis, R
Citation: K. Linthicum et al., Pendeoepitaxy of gallium nitride thin films, APPL PHYS L, 75(2), 1999, pp. 196-198
Direct versus indirect bioleaching
Authors: Sand, W Gehrke, T Jozsa, PG Schippers, A
Citation: W. Sand et al., Direct versus indirect bioleaching, PROCESS MET, 9, 1999, pp. 27-49
Risultati: 1-19 |