Authors: Jourba, S Gendry, I Regreny, P Hollinger, G

Citation: S. Jourba et al., Highly strained InxGa1-xGaAs/InP quantum wells grown by solid source MBE for applications in the 2-2.3 mu m spectral range, J CRYST GR, 202, 1999, pp. 1101-1104