AAAAAA

   
Results: 1-12 |
Results: 12
Fine structure of the edge ultraviolet luminescence of GaN : Mg films activated in a nitrogen plasma and the electroluminescence of a ZnO-GaN : Mg heterostructure based on these films
Authors: Georgobiani, AN Gruzintsev, AN Vorob'ev, MO Kaiser, U Richter, W Khodos, II
Citation: An. Georgobiani et al., Fine structure of the edge ultraviolet luminescence of GaN : Mg films activated in a nitrogen plasma and the electroluminescence of a ZnO-GaN : Mg heterostructure based on these films, SEMICONDUCT, 35(6), 2001, pp. 695-699
The edge ultraviolet luminescence of GaN : Zn films activated in a nitrogen plasma
Authors: Georgobiani, AN Gruzintsev, AN Aminov, UA Vorob'ev, MO Khodos, II
Citation: An. Georgobiani et al., The edge ultraviolet luminescence of GaN : Zn films activated in a nitrogen plasma, SEMICONDUCT, 35(2), 2001, pp. 144-148
Observation of minority-carrier traps in Schottky diodes with a high barrier and a compensated near-contact region using deep-level transient spectroscopy
Authors: Agafonov, EN Aminov, UA Georgobiani, AN Lepnev, LS
Citation: En. Agafonov et al., Observation of minority-carrier traps in Schottky diodes with a high barrier and a compensated near-contact region using deep-level transient spectroscopy, SEMICONDUCT, 35(1), 2001, pp. 48-53
Luminescence of native-defect p-type ZnO
Authors: Georgobiani, AN Kotlyarevskii, MB Kidalov, VV Lepnev, LS Rogozin, IV
Citation: An. Georgobiani et al., Luminescence of native-defect p-type ZnO, INORG MATER, 37(11), 2001, pp. 1095-1098
Infrared luminescence of Er3+ in calcium thiogallate
Authors: Georgobiani, AN Gruzintsev, AN Barthou, C Benalloul, P Benoit, J Tagiev, BG Tagiev, OB Dzhabborov, RB
Citation: An. Georgobiani et al., Infrared luminescence of Er3+ in calcium thiogallate, J ELCHEM SO, 148(11), 2001, pp. H167-H170
p-type II-VI compounds doped by rare-earth elements
Authors: Georgobiani, AN Kotljarevsky, MB Kidalov, VV Rogozin, IV Aminov, UA
Citation: An. Georgobiani et al., p-type II-VI compounds doped by rare-earth elements, J CRYST GR, 214, 2000, pp. 516-519
Luminescence of N-doped ZnSe with a p-n junction
Authors: Georgobiani, AN Aminov, UA Dravin, VA Ilyukhina, ZP
Citation: An. Georgobiani et al., Luminescence of N-doped ZnSe with a p-n junction, INORG MATER, 36(2), 2000, pp. 119-122
Synthesis and luminescent properties of ZnGa2S4 : Eu,F and ZnGa2O4 : Eu,F
Authors: Tagiev, BG Guseinov, GG Dzhabbarov, RB Tagiev, OB Musaeva, NN Georgobiani, AN
Citation: Bg. Tagiev et al., Synthesis and luminescent properties of ZnGa2S4 : Eu,F and ZnGa2O4 : Eu,F, INORG MATER, 36(12), 2000, pp. 1189-1191
Deep traps in CaS : Eu and CaS : Ce phosphors
Authors: Georgobiani, AN Gruzintsev, AN Nikiforova, TV Xi, XR Wang, YS
Citation: An. Georgobiani et al., Deep traps in CaS : Eu and CaS : Ce phosphors, INORG MATER, 36(11), 2000, pp. 1083-1087
Phase content and photoluminescence of ZnO layers obtained on ZnSe substrates by radical beam gettering epitaxy
Authors: Georgobiani, AN Kotlyarevsky, MB Rogozin, IV
Citation: An. Georgobiani et al., Phase content and photoluminescence of ZnO layers obtained on ZnSe substrates by radical beam gettering epitaxy, NUCL PH B-P, 78, 1999, pp. 484-487
Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities
Authors: Georgobiani, AN Aminov, UA Dravin, VA Lepnev, LS Mullabaev, ID Ursaki, VV Iljukhina, ZP
Citation: An. Georgobiani et al., Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities, NUCL INST A, 426(1), 1999, pp. 164-168
Variable-color yellow orange emitting ZnS : Mn2+ electroluminescent devices
Authors: Georgobiani, AN Gruzintsev, AN Xu, XR Lou, ZD
Citation: An. Georgobiani et al., Variable-color yellow orange emitting ZnS : Mn2+ electroluminescent devices, INORG MATER, 35(12), 1999, pp. 1221-1225
Risultati: 1-12 |