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Results: 1-10 |
Results: 10
Composition analysis of oxidized buried SiC layers in silicon from EFTEM images
Authors: Attenberger, W Lindner, JKN Schmid, M Gerlach, JW Stritzker, B
Citation: W. Attenberger et al., Composition analysis of oxidized buried SiC layers in silicon from EFTEM images, MAT SC S PR, 4(1-3), 2001, pp. 187-190
Ion beam assisted pulsed laser deposition of epitaxial aluminum nitride thin films on sapphire substrates
Authors: Six, S Gerlach, JW Rauschenbach, B
Citation: S. Six et al., Ion beam assisted pulsed laser deposition of epitaxial aluminum nitride thin films on sapphire substrates, SURF COAT, 142, 2001, pp. 397-401
Heteroepitaxial growth of 3C-SiC on (100) silicon by C-60 and Si molecularbeam epitaxy
Authors: Volz, K Schreiber, S Gerlach, JW Reiber, W Rauschenbach, B Stritzker, B Assmann, W Ensinger, W
Citation: K. Volz et al., Heteroepitaxial growth of 3C-SiC on (100) silicon by C-60 and Si molecularbeam epitaxy, MAT SCI E A, 289(1-2), 2000, pp. 255-264
Texture and epitaxy by ion beam assisted deposition of gallium nitride
Authors: Gerlach, JW Schwertberger, R Schrupp, D Rauschenbach, B Neumann, H Zeuner, M
Citation: Jw. Gerlach et al., Texture and epitaxy by ion beam assisted deposition of gallium nitride, SURF COAT, 128, 2000, pp. 286-291
Annealing study of ion implanted GaN
Authors: Liu, C Wenzel, A Gerlach, JW Fan, XF Rauschenbach, B
Citation: C. Liu et al., Annealing study of ion implanted GaN, SURF COAT, 128, 2000, pp. 455-460
Texture development in titanium nitride films grown by low-energy ion assisted deposition
Authors: Rauschenbach, B Gerlach, JW
Citation: B. Rauschenbach et Jw. Gerlach, Texture development in titanium nitride films grown by low-energy ion assisted deposition, CRYST RES T, 35(6-7), 2000, pp. 675-688
Trench homogeneity in plasma immersion ion implantation
Authors: Huber, P Keller, G Gerlach, JW Mandl, S Assmann, W Rauschenbach, B
Citation: P. Huber et al., Trench homogeneity in plasma immersion ion implantation, NUCL INST B, 161, 2000, pp. 1085-1089
Epitaxial aluminum nitride films on sapphire formed by pulsed laser deposition
Authors: Six, S Gerlach, JW Rauschenbach, B
Citation: S. Six et al., Epitaxial aluminum nitride films on sapphire formed by pulsed laser deposition, THIN SOL FI, 370(1-2), 2000, pp. 1-4
Residual stresses in cubic and hexagonal GaN grown on sapphire using ion beam-assisted deposition
Authors: Keckes, J Gerlach, JW Rauschenbach, B
Citation: J. Keckes et al., Residual stresses in cubic and hexagonal GaN grown on sapphire using ion beam-assisted deposition, J CRYST GR, 219(1-2), 2000, pp. 1-9
Low-energy ion assisted deposition of epitaxial gallium nitride films
Authors: Gerlach, JW Schrupp, D Volz, K Zeitler, M Rauschenbach, B Anders, A
Citation: Jw. Gerlach et al., Low-energy ion assisted deposition of epitaxial gallium nitride films, NUCL INST B, 148(1-4), 1999, pp. 406-410
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