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Citation: N. Gherardi et al., A new approach to SiO2 deposit using a N-2-SiH4-N2O glow dielectric barrier-controlled discharge at atmospheric pressure, J PHYS D, 33(19), 2000, pp. L104-L108
Authors:
Gat, E
Gherardi, N
Lemoing, S
Massines, F
Ricard, A
Citation: E. Gat et al., Quenching rates of N-2(C,upsilon ') vibrational states in N-2 and He glow silent discharges, CHEM P LETT, 306(5-6), 1999, pp. 263-268