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Results: 1-9 |
Results: 9

Authors: Devreese, JT Fomin, VM Gladilin, VN Imanaka, Y Miura, N
Citation: Jt. Devreese et al., Temperature dependence of the cyclotron mass in n-type Cds, PHYSICA B, 298(1-4), 2001, pp. 207-210

Authors: Gladilin, VN Fomin, VM Devreese, JT
Citation: Vn. Gladilin et al., Surface-induced magnetic anisotropy for impurity spins in granular AuFe films, PHYSICA B, 294, 2001, pp. 302-306

Authors: Devreese, JT Fomin, VM Gladilin, VN Klimin, SN
Citation: Jt. Devreese et al., Photoluminescence spectra of quantum dots: Enhanced efficiency of the electron-phonon interaction, PHYS ST S-B, 224(3), 2001, pp. 609-612

Authors: Bissiri, M Baldassarri, G Von H, GBH Capizzi, M Fomin, VM Gladilin, VN Devreese, JT
Citation: M. Bissiri et al., Polaron interaction in InAs/GaAs quantum dots and resonant photoluminescence, PHYS ST S-B, 224(3), 2001, pp. 639-642

Authors: Fomin, VM Gladilin, VN Klimin, SN Devreese, JT Koenraad, PM Wolter, JH
Citation: Vm. Fomin et al., Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots, PHYS REV B, 61(4), 2000, pp. R2436-R2439

Authors: Seynaeve, E Temst, K Aliev, FG Van Haesendonck, C Gladilin, VN Fomin, VM Devreese, JT
Citation: E. Seynaeve et al., Impurity spin magnetization of thin Fe doped Au films, PHYS REV L, 85(12), 2000, pp. 2593-2596

Authors: Fomin, VM Klimin, SN Gladilin, VN Devreese, JT
Citation: Vm. Fomin et al., Characterization of self-assembled quantum dots using the phonon-induced features of PL spectra, J LUMINESC, 87-9, 2000, pp. 330-332

Authors: Devreese, JT Fomin, VM Gladilin, VN Imanaka, Y Miura, N
Citation: Jt. Devreese et al., High magnetic field cyclotron resonance in CdS: Explanation of the non-monotonic temperature dependence of the cyclotron mass, J CRYST GR, 214, 2000, pp. 465-468

Authors: Pokatilov, EP Fomin, VM Balaban, SN Gladilin, VN Klimin, SN Devreese, JT Magnus, W Schoenmaker, W Collaert, N Van Rossum, M De Meyer, K
Citation: Ep. Pokatilov et al., Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures, J APPL PHYS, 85(9), 1999, pp. 6625-6631
Risultati: 1-9 |