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Results:
1-14
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Results: 14
Authors:
Schuler, TM
Ederer, DL
Ruzycki, N
Glass, G
Hollerman, WA
Moewes, A
Kuhn, M
Callcott, TA
Citation: Tm. Schuler et al., Diffusion of TiN into aluminum films measured by soft x-ray spectroscopy and Rutherford backscattering spectroscopy, J VAC SCI A, 19(5), 2001, pp. 2259-2266
Authors:
Pasyuk, EA
Boudrie, RL
Gram, PAM
Morris, CL
Zumbro, JD
Matthews, JL
Tan, Y
Zelevinsky, VV
Glass, G
Kriss, BJ
Citation: Ea. Pasyuk et al., A study of the Delta(-)-component of the wave function in light nuclei, PHYS LETT B, 523(1-2), 2001, pp. 1-5
Authors:
Kim, H
Glass, G
Desjardins, P
Greene, JE
Citation: H. Kim et al., Ultra-highly doped Si1-xGex(001): B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics, J APPL PHYS, 89(1), 2001, pp. 194-205
Authors:
Kim, H
Glass, G
Soares, JANT
Foo, YL
Desjardins, P
Greene, JE
Citation: H. Kim et al., Temperature-modulated Si(001): As gas-source molecular beam epitaxy: Growth kinetics and As incorporation, APPL PHYS L, 79(20), 2001, pp. 3263-3265
Authors:
Glass, G
Kim, H
Desjardins, P
Taylor, N
Spila, T
Lu, Q
Greene, JE
Citation: G. Glass et al., Ultrahigh B doping (<= 10(22) cm(-)3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport, PHYS REV B, 61(11), 2000, pp. 7628-7644
Authors:
Vailionis, A
Cho, B
Glass, G
Desjardins, P
Cahill, DG
Greene, JE
Citation: A. Vailionis et al., Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001), PHYS REV L, 85(17), 2000, pp. 3672-3675
Authors:
Kim, H
Glass, G
Soares, JANT
Desjardins, P
Greene, JE
Citation: H. Kim et al., Arsenic incorporation during Si(001): As gas-source molecular-beam epitaxyfrom Si2H6 and AsH3: Effects on film-growth kinetics, J APPL PHYS, 88(12), 2000, pp. 7067-7078
Authors:
Zhao, Q
Burleson, G
Blanchard, S
Chang, T
Gibbs, W
Haas, J
Park, B
Whitton, M
Espy, M
Dehnhard, D
Larson, B
O'Donnell, J
Palarczyk, M
Cummings, W
Delheij, P
Hausser, O
Pasyuk, E
Gostkin, M
Amann, J
Boudrie, R
Riedel, C
Morris, C
Pentilla, S
Swenson, D
Tupa, D
Comfort, J
Gaulard, C
Maeda, K
Glass, G
Supek, I
Citation: Q. Zhao et al., Measurements of asymmetries of pion single charge exchange on polarized He-3 at 200 MeV - art. no. 024001, PHYS REV C, 6002(2), 1999, pp. 4001
Authors:
Zenilman, JM
Ellish, N
Fresia, A
Glass, G
Citation: Jm. Zenilman et al., The geography of sexual partnerships in Baltimore: Applications of core theory dynamics using a geographic information system, SEX TRA DIS, 26(2), 1999, pp. 75-81
Authors:
Roberts, JW
Clifford, WS
Glass, G
Hummer, PC
Citation: Jw. Roberts et al., Reducing dust, lead, dust mites, bacteria, and fungi in carpets by vacuuming, ARCH ENV C, 36(4), 1999, pp. 477-484
Authors:
Vailionis, A
Glass, G
Desjardins, P
Cahill, DG
Greene, JE
Citation: A. Vailionis et al., Electrically active and inactive B lattice sites in ultrahighly B doped Si(001): An x-ray near-edge absorption fine-structure and high-resolution diffraction study, PHYS REV L, 82(22), 1999, pp. 4464-4467
Authors:
Loth, B
Brown, NP
Glass, G
Citation: B. Loth et al., Reorganization impacts upstream technology, OIL GAS J, 97(3), 1999, pp. 55-59
Authors:
Taylor, N
Kim, H
Spila, T
Eades, JA
Glass, G
Desjardins, P
Greene, JE
Citation: N. Taylor et al., Growth of Si1-xGex(011) on Si(011)16x2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions, J APPL PHYS, 85(1), 1999, pp. 501-511
Authors:
Soares, JANT
Kim, H
Glass, G
Desjardins, P
Greene, JE
Citation: Jant. Soares et al., Arsenic-doped Si (001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties, APPL PHYS L, 74(9), 1999, pp. 1290-1292
Risultati:
1-14
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