Authors:
Jouan, S
Planche, R
Baudry, H
Ribot, P
Chroboczek, JA
Dutartre, D
Gloria, D
Laurens, M
Llinares, P
Marty, M
Monroy, A
Morin, C
Pantel, R
Perrotin, A
de Pontcharra, J
Regolini, JL
Vincent, G
Chantre, A
Citation: S. Jouan et al., A high-speed low 1/f noise SiGeHBT technology using epitaxially-aligned polysilicon emitters, IEEE DEVICE, 46(7), 1999, pp. 1525-1531