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Results: 1-10 |
Results: 10
Improvement of charge minority-carrier lifetime in p(boron)-type Czochralski silicon by rapid thermal annealing
Authors: Lee, JY Peters, S Rein, S Glunz, SW
Citation: Jy. Lee et al., Improvement of charge minority-carrier lifetime in p(boron)-type Czochralski silicon by rapid thermal annealing, PROG PHOTOV, 9(6), 2001, pp. 417-424
Impact of light-induced recombination centres on the current-voltage characteristic of Czochralski silicon solar cells
Authors: Schmidt, J Cuevas, A Rein, S Glunz, SW
Citation: J. Schmidt et al., Impact of light-induced recombination centres on the current-voltage characteristic of Czochralski silicon solar cells, PROG PHOTOV, 9(4), 2001, pp. 249-255
Degradation of carrier lifetime in Cz silicon solar cells
Authors: Glunz, SW Rein, S Warta, W Knobloch, J Wettling, W
Citation: Sw. Glunz et al., Degradation of carrier lifetime in Cz silicon solar cells, SOL EN MAT, 65(1-4), 2001, pp. 219-229
Minority carrier lifetime degradation in boron-doped Czochralski silicon
Authors: Glunz, SW Rein, S Lee, JY Warta, W
Citation: Sw. Glunz et al., Minority carrier lifetime degradation in boron-doped Czochralski silicon, J APPL PHYS, 90(5), 2001, pp. 2397-2404
Highly efficient 115-mu m-thick solar cells on industrial Czochralski silicon
Authors: Warta, W Glunz, SW Dicker, J Knobloch, J
Citation: W. Warta et al., Highly efficient 115-mu m-thick solar cells on industrial Czochralski silicon, PROG PHOTOV, 8(5), 2000, pp. 465-471
100 cm(2) solar cells on Czochralski silicon with an efficiency of 20 center dot 2%
Authors: Glunz, SW Koster, B Leimenstoll, T Rein, S Schaffer, E Knobloch, J Abe, T
Citation: Sw. Glunz et al., 100 cm(2) solar cells on Czochralski silicon with an efficiency of 20 center dot 2%, PROG PHOTOV, 8(2), 2000, pp. 237-240
Laser micromachining for applications in thin film technology
Authors: Pfleging, W Ludwig, A Seemann, K Preu, R Mackel, H Glunz, SW
Citation: W. Pfleging et al., Laser micromachining for applications in thin film technology, APPL SURF S, 154, 2000, pp. 633-639
Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application
Authors: Glunz, SW Rein, S Knobloch, J Wettling, W Abe, T
Citation: Sw. Glunz et al., Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application, PROG PHOTOV, 7(6), 1999, pp. 463-469
Self-aligned metallization and reactive ion etched buried base contact solar cells
Authors: Schaefer, S Ludemann, R Glunz, SW
Citation: S. Schaefer et al., Self-aligned metallization and reactive ion etched buried base contact solar cells, PROG PHOTOV, 7(5), 1999, pp. 387-392
Field-effect passivation of the SiO2-Si interface
Authors: Glunz, SW Biro, D Rein, S Warta, W
Citation: Sw. Glunz et al., Field-effect passivation of the SiO2-Si interface, J APPL PHYS, 86(1), 1999, pp. 683-691
Risultati: 1-10 |