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Citation: He. Nilsson et al., Numerical modeling of hole interband tunneling in wurtzite GaN and SiC, J APPL PHYS, 90(6), 2001, pp. 2847-2852

Authors: Goano, M Bertazzi, F Caravelli, P Ghione, G Driscoll, TA

Citation: M. Goano et al., A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section, IEEE MICR T, 49(9), 2001, pp. 1573-1580

Authors: Farahmand, M Garetto, C Bellotti, E Brennan, KF Goano, M Ghillino, E Ghione, G Albrecht, JD Ruden, PP

Citation: M. Farahmand et al., Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries, IEEE DEVICE, 48(3), 2001, pp. 535-542

Authors: Goano, M Bellotti, E Ghillino, E Ghione, G Brennan, KF

Citation: M. Goano et al., Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN, J APPL PHYS, 88(11), 2000, pp. 6467-6475

Authors: Goano, M Bellotti, E Ghillino, E Garetto, C Ghione, G Brennan, KF

Citation: M. Goano et al., Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1-xN, InxGa1-xN,and InxAl1-xN, J APPL PHYS, 88(11), 2000, pp. 6476-6482

Authors: Ghione, G Goano, M Madonna, G Omegna, G Pirola, M Bosso, S Frassati, D Perasso, A

Citation: G. Ghione et al., Microwave modeling and characterization of thick coplanar waveguides on oxide-coated lithium niobate substrates for electrooptical applications, IEEE MICR T, 47(12), 1999, pp. 2287-2293