Authors:
Talalaev, VG
Novikov, BV
Verbin, SY
Novikov, AB
Thath, DS
Shchur, IV
Gobsch, G
Goldhahn, R
Stein, N
Golombek, A
Tsyrlin, GE
Petrov, VN
Ustinov, VM
Zhukov, AE
Egorov, AY
Citation: Vg. Talalaev et al., Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces, SEMICONDUCT, 34(4), 2000, pp. 453-461
Authors:
Goldhahn, R
Shokhovets, S
Scheiner, J
Gobsch, G
Cheng, TS
Foxon, CT
Kaiser, U
Kipshidze, GD
Richter, W
Citation: R. Goldhahn et al., Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies, PHYS ST S-A, 177(1), 2000, pp. 107-115
Authors:
Scheiner, J
Goldhahn, R
Cimalla, V
Ecke, G
Attenberger, W
Lindner, JKM
Gobsch, G
Pezoldt, J
Citation: J. Scheiner et al., Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon, MAT SCI E B, 61-2, 1999, pp. 526-530
Authors:
Shokhovets, S
Goldhahn, R
Gobsch, G
Cheng, TS
Foxon, CT
Citation: S. Shokhovets et al., Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs, MAT SCI E B, 59(1-3), 1999, pp. 69-72
Authors:
Shokhovets, S
Goldhahn, R
Gobsch, G
Cheng, TS
Foxon, CT
Kipshidze, GD
Richter, W
Citation: S. Shokhovets et al., Reflectivity investigations as a method for characterizing group III nitride films, J APPL PHYS, 86(5), 1999, pp. 2602-2610