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Results: 1-11 |
Results: 11
Defects in silicon induced by high energy helium implantation and their evolution during anneals
Authors: Beaufort, MF Oliviero, E Garem, H Godey, S Ntsoenzok, E Blanchard, C Barbot, JF
Citation: Mf. Beaufort et al., Defects in silicon induced by high energy helium implantation and their evolution during anneals, PHIL MAG B, 80(11), 2000, pp. 1975-1985
Helium desorption from cavities induced by high energy He-3 and He-4 implantation in silicon
Authors: Godey, S Ntsoenzok, E Sauvage, T van Veen, A Labohm, F Beaufort, MF Barbot, JF
Citation: S. Godey et al., Helium desorption from cavities induced by high energy He-3 and He-4 implantation in silicon, MAT SCI E B, 73(1-3), 2000, pp. 54-59
Proximity gettering of platinum in silicon following implantation with alpha particles at low doses
Authors: Schmidt, DC Barbot, JF Blanchard, C Godey, S Ntsoenzok, E Svensson, BG
Citation: Dc. Schmidt et al., Proximity gettering of platinum in silicon following implantation with alpha particles at low doses, MAT SCI E B, 71, 2000, pp. 182-185
Gettering of platinum by cavities induced in silicon by high energy implantation of HE ions
Authors: Mariani-Regula, G Pichaud, B Godey, S Ntsoenzok, E Perner, O El Bouayadi, R
Citation: G. Mariani-regula et al., Gettering of platinum by cavities induced in silicon by high energy implantation of HE ions, MAT SCI E B, 71, 2000, pp. 203-206
Cavities and dislocations induced in silicon by MeV He implantation
Authors: Godey, S Sauvage, T Ntsoenzok, E Erramli, H Beaufort, MF Barbot, JF Leroy, B
Citation: S. Godey et al., Cavities and dislocations induced in silicon by MeV He implantation, J APPL PHYS, 87(5), 2000, pp. 2158-2161
Effect of shallow donors induced by hydrogen on P+N junctions
Authors: Godey, S Ntsoenzok, E Schmidt, DC Barbot, JF
Citation: S. Godey et al., Effect of shallow donors induced by hydrogen on P+N junctions, MAT SCI E B, 58(1-2), 1999, pp. 108-112
Enhanced diffusion of platinum in electron-irradiated silicon
Authors: Schmidt, DC Svensson, BG Lindstrom, JL Godey, S Ntsoenzok, E Barbot, JF Blanchard, C
Citation: Dc. Schmidt et al., Enhanced diffusion of platinum in electron-irradiated silicon, MAT SCI E B, 57(2), 1999, pp. 161-164
Residual defects in Cz-silicon after low dose self-implantation and annealing from 400 degrees C to 800 degrees C
Authors: Schmidt, DC Svensson, BG Godey, S Ntsoenzok, E Barbot, JF Blanchard, C
Citation: Dc. Schmidt et al., Residual defects in Cz-silicon after low dose self-implantation and annealing from 400 degrees C to 800 degrees C, NUCL INST B, 147(1-4), 1999, pp. 106-110
Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation
Authors: Schmidt, DC Svensson, BG Godey, S Ntsoenzok, E Barbot, JF Blanchard, C
Citation: Dc. Schmidt et al., Low temperature proximity gettering of platinum in proton irradiated silicon via interstitial cluster dissociation, NUCL INST B, 147(1-4), 1999, pp. 127-131
2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects
Authors: Schmidt, DC Svensson, BG Lindstrom, JL Godey, S Ntsoenzok, E Barbot, JF Blanchard, C
Citation: Dc. Schmidt et al., 2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects, J APPL PHYS, 85(7), 1999, pp. 3556-3560
The influence of diffusion temperature and ion dose on proximity getteringof platinum in silicon implanted with alpha particles at low doses
Authors: Schmidt, DC Svensson, BG Godey, S Ntsoenzok, E Barbot, JF Blanchard, C
Citation: Dc. Schmidt et al., The influence of diffusion temperature and ion dose on proximity getteringof platinum in silicon implanted with alpha particles at low doses, APPL PHYS L, 74(22), 1999, pp. 3329-3331
Risultati: 1-11 |