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Citation: Ms. Brandt et al., Spin-dependent electronic noise, PHYSICA E, 10(1-3), 2001, pp. 67-70

Authors: Goennenwein, STB Zeisel, R Ambacher, O Brandt, MS Stutzmann, M Baldovino, S

Citation: Stb. Goennenwein et al., Generation-recombination noise of DX centers in AlN : Si, APPL PHYS L, 79(15), 2001, pp. 2396-2398

Authors: Zeisel, R Bayerl, MW Goennenwein, STB Dimitrov, R Ambacher, O Brandt, MS Stutzmann, M

Citation: R. Zeisel et al., DX-behavior of Si in AlN, PHYS REV B, 61(24), 2000, pp. R16283-R16286

Authors: Goennenwein, STB Bayerl, MW Brandt, MS Stutzmann, M

Citation: Stb. Goennenwein et al., Microscopic identification of the origin of generation-recombination noisein hydrogenated amorphous silicon with noise-detected magnetic resonance, PHYS REV L, 84(22), 2000, pp. 5188-5191

Authors: Goennenwein, STB Bayerl, MW Brandt, MS Stutzmann, M

Citation: Stb. Goennenwein et al., Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon, J NON-CRYST, 266, 2000, pp. 237-241