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Citation: Id. Goepfert et al., Efficient acceptor activation in AlxGa1-xN/GaN doped superlattices, MRS I J N S, 5, 2000, pp. NIL_282-NIL_287

Authors: Goepfert, ID Schubert, EF Osinsky, A Norris, PE Faleev, NN

Citation: Id. Goepfert et al., Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1-xN/GaN superlattices, J APPL PHYS, 88(4), 2000, pp. 2030-2038

Authors: Stocker, DA Goepfert, ID Schubert, EF Boutros, KS Redwing, JM

Citation: Da. Stocker et al., Crystallographic wet chemical etching of p-type GaN, J ELCHEM SO, 147(2), 2000, pp. 763-764

Authors: Goepfert, ID Schubert, EF Osinsky, A Norris, PE

Citation: Id. Goepfert et al., Demonstration of efficient p-type doping in AlxGa1-xN/GaN superlattice structures, ELECTR LETT, 35(13), 1999, pp. 1109-1111