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Results:
1-5
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Results: 5
Relation between electroluminescence and photoluminescence in porous silicon
Authors:
Savir, E Jedrzejewski, J Many, A Goldstein, Y Weisz, SZ Gomez, M Fonseca, LF Resto, O
Citation:
E. Savir et al., Relation between electroluminescence and photoluminescence in porous silicon, MAT SCI E B, 72(2-3), 2000, pp. 138-141
OH-related emitting centers in interface layer of porous silicon
Authors:
Torchynska, TV Sheinkman, MK Korsunskaya, NE Khomenkovan, LY Bulakh, BM Dzhumaev, BR Many, A Goldstein, Y Savir, E
Citation:
Tv. Torchynska et al., OH-related emitting centers in interface layer of porous silicon, PHYSICA B, 274, 1999, pp. 955-958
Surface quantum wells in hydrogen implanted ZnO (vol 212, pg 89, 1999)
Authors:
Bogatu, V Goldenblum, A Many, A Goldstein, Y
Citation:
V. Bogatu et al., Surface quantum wells in hydrogen implanted ZnO (vol 212, pg 89, 1999), PHYS ST S-B, 212(2), 1999, pp. 397-397
Surface quantum wells in hydrogen implanted ZnO
Authors:
Bogatu, V Goldenblum, A Many, A Goldstein, Y
Citation:
V. Bogatu et al., Surface quantum wells in hydrogen implanted ZnO, PHYS ST S-B, 212(1), 1999, pp. 89-96
Weak localization effects in ZnO surface wells
Authors:
Goldenblum, A Bogatu, V Stoica, T Goldstein, Y Many, A
Citation:
A. Goldenblum et al., Weak localization effects in ZnO surface wells, PHYS REV B, 60(8), 1999, pp. 5832-5838
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