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Otterbach, R
Hilleringmann, U
Horstmann, JT
Goser, K
Citation: R. Otterbach et al., Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications, DIAM RELAT, 10(3-7), 2001, pp. 511-514
Citation: Jt. Horstmann et al., 1/f-noise of sub-100 nm-MOS-transistors fabricated by a special depositionand etchback technique, MICROEL ENG, 53(1-4), 2000, pp. 213-216
Authors:
Luck, A
Jung, S
Brederlow, R
Thewes, R
Goser, K
Weber, W
Citation: A. Luck et al., On the design robustness of threshold logic gates using multi-input floating gate MOS transistors, IEEE DEVICE, 47(6), 2000, pp. 1231-1240