Authors: Moriarty, GR Murtagh, M Cherkaoui, K Gouez, G Kelly, PV Crean, GM Bland, SW

Citation: Gr. Moriarty et al., Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers, MAT SCI E B, 80(1-3), 2001, pp. 284-288