Authors:
Goyette, AN
de Urquijo, J
Wang, YC
Christophorou, LG
Olthoff, JK
Citation: An. Goyette et al., Electron transport, ionization, and attachment coefficients in C2F4 and C2F4/Ar mixtures, J CHEM PHYS, 114(20), 2001, pp. 8932-8937
Authors:
Bhattacharyya, S
Auciello, O
Birrell, J
Carlisle, JA
Curtiss, LA
Goyette, AN
Gruen, DM
Krauss, AR
Schlueter, J
Sumant, A
Zapol, P
Citation: S. Bhattacharyya et al., Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films, APPL PHYS L, 79(10), 2001, pp. 1441-1443
Citation: Lw. Anderson et al., Uses of high-sensitivity white-light absorption spectroscopy in chemical vapor deposition and plasma processing, ADV ATOM MO, 43, 2000, pp. 295-339
Authors:
Goyette, AN
Wang, YC
Misakian, M
Olthoff, JK
Citation: An. Goyette et al., Ion fluxes and energies in inductively coupled radio-frequency discharges containing C2F6 and c-C4F8, J VAC SCI A, 18(6), 2000, pp. 2785-2790
Authors:
Wang, YC
Misakian, M
Goyette, AN
Olthoff, JK
Citation: Yc. Wang et al., Ion fluxes and energies in inductively coupled radio-frequency discharges containing CHF3, J APPL PHYS, 88(10), 2000, pp. 5612-5617