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Results: 4
Applications of II-VI diluted magnetic semiconductors for magneto-electronics
Authors:
Ferrand, D Wasiela, A Tatarenko, S Cibert, J Richter, G Grabs, P Schmidt, G Molenkamp, LW Dietl, T
Citation:
D. Ferrand et al., Applications of II-VI diluted magnetic semiconductors for magneto-electronics, SOL ST COMM, 119(4-5), 2001, pp. 237-244
Large magnetoresistance effect due to spin injection into a nonmagnetic semiconductor - art. no. 227203
Authors:
Schmidt, G Richter, G Grabs, P Gould, C Ferrand, D Molenkamp, LW
Citation:
G. Schmidt et al., Large magnetoresistance effect due to spin injection into a nonmagnetic semiconductor - art. no. 227203, PHYS REV L, 8722(22), 2001, pp. 7203
MBE-grown laser diodes based on beryllium containing II-VI semiconductors
Authors:
Lugauer, HJ Keim, M Reuscher, G Grabs, P Lunz, U Waag, A Landwehr, G Ivanov, S Shubina, T Toropov, A Il'inskaya, N Kop'ev, P Alferov, Z
Citation:
Hj. Lugauer et al., MBE-grown laser diodes based on beryllium containing II-VI semiconductors, J CRYST GR, 202, 1999, pp. 927-932
High response photodiodes based on Be-chalcogenides
Authors:
Siess, J Reuscher, G Grabs, P Lugauer, HJ Schallenberg, T Ehinger, M Waag, A Landwehr, G
Citation:
J. Siess et al., High response photodiodes based on Be-chalcogenides, J CRYST GR, 202, 1999, pp. 965-967
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