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Results: 1-25 | 26-42
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Authors: Baumann, FH Chopp, DL de la Rubia, TD Gilmer, GH Greene, JE Huang, H Kodambaka, S O'Sullivan, P Petrov, I
Citation: Fh. Baumann et al., Multiscale modeling of thin-film deposition: Applications to Si device processing, MRS BULL, 26(3), 2001, pp. 182-189

Authors: Greene, JE
Citation: Je. Greene, Atomic-level control during film growth under highly kinetically constrained conditions: H mediation and ultrahigh doping during Si1-xGex gas-source epitaxy, MRS BULL, 26(10), 2001, pp. 777-789

Authors: Chun, JS Desjardins, P Lavoie, C Petrov, I Cabral, C Greene, JE
Citation: Js. Chun et al., Interfacial reaction pathways and kinetics during annealing of 111-textured Al-TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study, J VAC SCI A, 19(5), 2001, pp. 2207-2216

Authors: Chun, JS Carlsson, JRA Desjardins, P Bergstrom, DB Petrov, I Greene, JE Lavoie, C Cabral, C Hultman, L
Citation: Js. Chun et al., Synchrotron x-ray diffraction and transmission electron microscopy studiesof interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers, J VAC SCI A, 19(1), 2001, pp. 182-191

Authors: Gall, D Stoehr, M Greene, JE
Citation: D. Gall et al., Vibrational modes in epitaxial Ti1-xScxN(001) layers: An ab initio calculation and Raman spectroscopy study - art. no. 174302, PHYS REV B, 6417(17), 2001, pp. 4302

Authors: Gall, D Stadele, M Jarrendahl, K Petrov, I Desjardins, P Haasch, RT Lee, TY Greene, JE
Citation: D. Gall et al., Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations - art. no. 125119, PHYS REV B, 6312(12), 2001, pp. 5119

Authors: Kodambaka, S Petrova, V Vailionis, A Desjardins, P Cahill, DG Petrov, I Greene, JE
Citation: S. Kodambaka et al., TiN(001) and TiN(111) island coarsening kinetics: in-situ scanning tunneling microscopy studies, THIN SOL FI, 392(2), 2001, pp. 164-168

Authors: Chun, JS Desjardins, P Petrov, I Greene, JE Lavoie, C Cabral, C
Citation: Js. Chun et al., Interfacial reaction pathways and kinetics during annealing of epitaxial Al/TiN(001) model diffusion barrier systems, THIN SOL FI, 391(1), 2001, pp. 69-80

Authors: Kim, H Spila, T Greene, JE
Citation: H. Kim et al., Si(113) hydrogen desorption kinetics: a temperature programmed desorption study, SURF SCI, 490(1-2), 2001, pp. L602-L608

Authors: Taylor, N Kim, H Greene, JE
Citation: N. Taylor et al., Ge surface segregation during Si1-xGex(011) gas-source molecular beam epitaxy from Si2H6 and Ge2H6, SURF SCI, 475(1-3), 2001, pp. 171-180

Authors: D'Arcy-Gall, J Gall, D Petrov, I Desjardins, P Greene, JE
Citation: J. D'Arcy-gall et al., Quantitative C lattice site distributions in epitaxial Ge1-yCy/Ge(001) layers, J APPL PHYS, 90(8), 2001, pp. 3910-3918

Authors: Shin, CS Gall, D Kim, YW Desjardins, P Petrov, I Greene, JE Oden, M Hultman, L
Citation: Cs. Shin et al., Epitaxial NaCl structure delta-TaNx(001): Electronic transport properties,elastic modulus, and hardness versus N/Ta ratio, J APPL PHYS, 90(6), 2001, pp. 2879-2885

Authors: Chun, JS Desjardins, P Lavoie, C Shin, CS Cabral, C Petrov, I Greene, JE
Citation: Js. Chun et al., Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited Wurtzite-structure ALN(0001) blocking layer, J APPL PHYS, 89(12), 2001, pp. 7841-7845

Authors: Kim, H Glass, G Desjardins, P Greene, JE
Citation: H. Kim et al., Ultra-highly doped Si1-xGex(001): B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics, J APPL PHYS, 89(1), 2001, pp. 194-205

Authors: Gall, D Petrov, I Greene, JE
Citation: D. Gall et al., Epitaxial Sc1-xTixN(001): Optical and electronic transport properties, J APPL PHYS, 89(1), 2001, pp. 401-409

Authors: Kim, H Glass, G Soares, JANT Foo, YL Desjardins, P Greene, JE
Citation: H. Kim et al., Temperature-modulated Si(001): As gas-source molecular beam epitaxy: Growth kinetics and As incorporation, APPL PHYS L, 79(20), 2001, pp. 3263-3265

Authors: Williamson, MJ Dunn, DN Hull, R Kodambaka, S Petrov, I Greene, JE
Citation: Mj. Williamson et al., Evolution of nanoscale texture in ultrathin TiN films, APPL PHYS L, 78(15), 2001, pp. 2223-2225

Authors: Glass, G Kim, H Desjardins, P Taylor, N Spila, T Lu, Q Greene, JE
Citation: G. Glass et al., Ultrahigh B doping (<= 10(22) cm(-)3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport, PHYS REV B, 61(11), 2000, pp. 7628-7644

Authors: Ramanath, G Greene, JE Petrov, I Baker, JE Allen, LH Gillen, G
Citation: G. Ramanath et al., Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry, J VAC SCI B, 18(3), 2000, pp. 1369-1374

Authors: Kodambaka, S Petrova, V Vailionis, A Desjardins, P Cahill, DG Petrov, I Greene, JE
Citation: S. Kodambaka et al., In-situ high-temperature scanning-tunnelling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001), SURF REV L, 7(5-6), 2000, pp. 589-593

Authors: D'Arcy-Gall, J Gall, D Desjardins, P Petrov, I Greene, JE
Citation: J. D'Arcy-gall et al., Role of fast sputtered particles during sputter deposition: Growth of epitaxial Ge0.99C0.01/Ge(001), PHYS REV B, 62(16), 2000, pp. 11203-11208

Authors: Zhang, M Efremov, MY Schiettekatte, F Olson, EA Kwan, AT Lai, SL Wisleder, T Greene, JE Allen, LH
Citation: M. Zhang et al., Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements, PHYS REV B, 62(15), 2000, pp. 10548-10557

Authors: Gall, D D'Arcy-Gall, J Greene, JE
Citation: D. Gall et al., C incorporation in epitaxial Ge1-yCy layers grown on Ge(001): An ab initiostudy, PHYS REV B, 62(12), 2000, pp. R7723-R7726

Authors: Karr, BW Cahill, DG Petrov, I Greene, JE
Citation: Bw. Karr et al., Effects of high-flux low-energy ion bombardment on the low-temperature growth morphology of TiN(001) epitaxial layers, PHYS REV B, 61(23), 2000, pp. 16137-16143

Authors: Chirita, V Munger, EP Greene, JE Sundgren, JE
Citation: V. Chirita et al., Cluster diffusion and surface morphological transitions on Pt(111) via reptation and concerted motion, THIN SOL FI, 370(1-2), 2000, pp. 179-185
Risultati: 1-25 | 26-42