Citation: Je. Greene, Atomic-level control during film growth under highly kinetically constrained conditions: H mediation and ultrahigh doping during Si1-xGex gas-source epitaxy, MRS BULL, 26(10), 2001, pp. 777-789
Authors:
Chun, JS
Desjardins, P
Lavoie, C
Petrov, I
Cabral, C
Greene, JE
Citation: Js. Chun et al., Interfacial reaction pathways and kinetics during annealing of 111-textured Al-TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study, J VAC SCI A, 19(5), 2001, pp. 2207-2216
Authors:
Chun, JS
Carlsson, JRA
Desjardins, P
Bergstrom, DB
Petrov, I
Greene, JE
Lavoie, C
Cabral, C
Hultman, L
Citation: Js. Chun et al., Synchrotron x-ray diffraction and transmission electron microscopy studiesof interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers, J VAC SCI A, 19(1), 2001, pp. 182-191
Citation: D. Gall et al., Vibrational modes in epitaxial Ti1-xScxN(001) layers: An ab initio calculation and Raman spectroscopy study - art. no. 174302, PHYS REV B, 6417(17), 2001, pp. 4302
Authors:
Gall, D
Stadele, M
Jarrendahl, K
Petrov, I
Desjardins, P
Haasch, RT
Lee, TY
Greene, JE
Citation: D. Gall et al., Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations - art. no. 125119, PHYS REV B, 6312(12), 2001, pp. 5119
Authors:
Kodambaka, S
Petrova, V
Vailionis, A
Desjardins, P
Cahill, DG
Petrov, I
Greene, JE
Citation: S. Kodambaka et al., TiN(001) and TiN(111) island coarsening kinetics: in-situ scanning tunneling microscopy studies, THIN SOL FI, 392(2), 2001, pp. 164-168
Authors:
Chun, JS
Desjardins, P
Petrov, I
Greene, JE
Lavoie, C
Cabral, C
Citation: Js. Chun et al., Interfacial reaction pathways and kinetics during annealing of epitaxial Al/TiN(001) model diffusion barrier systems, THIN SOL FI, 391(1), 2001, pp. 69-80
Citation: N. Taylor et al., Ge surface segregation during Si1-xGex(011) gas-source molecular beam epitaxy from Si2H6 and Ge2H6, SURF SCI, 475(1-3), 2001, pp. 171-180
Authors:
D'Arcy-Gall, J
Gall, D
Petrov, I
Desjardins, P
Greene, JE
Citation: J. D'Arcy-gall et al., Quantitative C lattice site distributions in epitaxial Ge1-yCy/Ge(001) layers, J APPL PHYS, 90(8), 2001, pp. 3910-3918
Authors:
Shin, CS
Gall, D
Kim, YW
Desjardins, P
Petrov, I
Greene, JE
Oden, M
Hultman, L
Citation: Cs. Shin et al., Epitaxial NaCl structure delta-TaNx(001): Electronic transport properties,elastic modulus, and hardness versus N/Ta ratio, J APPL PHYS, 90(6), 2001, pp. 2879-2885
Authors:
Chun, JS
Desjardins, P
Lavoie, C
Shin, CS
Cabral, C
Petrov, I
Greene, JE
Citation: Js. Chun et al., Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited Wurtzite-structure ALN(0001) blocking layer, J APPL PHYS, 89(12), 2001, pp. 7841-7845
Citation: H. Kim et al., Ultra-highly doped Si1-xGex(001): B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics, J APPL PHYS, 89(1), 2001, pp. 194-205
Authors:
Kim, H
Glass, G
Soares, JANT
Foo, YL
Desjardins, P
Greene, JE
Citation: H. Kim et al., Temperature-modulated Si(001): As gas-source molecular beam epitaxy: Growth kinetics and As incorporation, APPL PHYS L, 79(20), 2001, pp. 3263-3265
Authors:
Glass, G
Kim, H
Desjardins, P
Taylor, N
Spila, T
Lu, Q
Greene, JE
Citation: G. Glass et al., Ultrahigh B doping (<= 10(22) cm(-)3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport, PHYS REV B, 61(11), 2000, pp. 7628-7644
Authors:
Ramanath, G
Greene, JE
Petrov, I
Baker, JE
Allen, LH
Gillen, G
Citation: G. Ramanath et al., Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry, J VAC SCI B, 18(3), 2000, pp. 1369-1374
Authors:
Kodambaka, S
Petrova, V
Vailionis, A
Desjardins, P
Cahill, DG
Petrov, I
Greene, JE
Citation: S. Kodambaka et al., In-situ high-temperature scanning-tunnelling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001), SURF REV L, 7(5-6), 2000, pp. 589-593
Authors:
D'Arcy-Gall, J
Gall, D
Desjardins, P
Petrov, I
Greene, JE
Citation: J. D'Arcy-gall et al., Role of fast sputtered particles during sputter deposition: Growth of epitaxial Ge0.99C0.01/Ge(001), PHYS REV B, 62(16), 2000, pp. 11203-11208
Authors:
Zhang, M
Efremov, MY
Schiettekatte, F
Olson, EA
Kwan, AT
Lai, SL
Wisleder, T
Greene, JE
Allen, LH
Citation: M. Zhang et al., Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements, PHYS REV B, 62(15), 2000, pp. 10548-10557
Citation: Bw. Karr et al., Effects of high-flux low-energy ion bombardment on the low-temperature growth morphology of TiN(001) epitaxial layers, PHYS REV B, 61(23), 2000, pp. 16137-16143
Authors:
Chirita, V
Munger, EP
Greene, JE
Sundgren, JE
Citation: V. Chirita et al., Cluster diffusion and surface morphological transitions on Pt(111) via reptation and concerted motion, THIN SOL FI, 370(1-2), 2000, pp. 179-185