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Results: 1-9 |
Results: 9

Authors: Aspar, B Moriceau, H Jalaguier, E Lagahe, C Soubie, A Biasse, B Papon, AM Claverie, A Grisolia, J Benassayag, G Letertre, F Rayssac, O Barge, T Maleville, C Ghyselen, B
Citation: B. Aspar et al., The generic nature of the Smart-Cut((R)) process for thin film transfer, J ELEC MAT, 30(7), 2001, pp. 834-840

Authors: Cristiano, F Colombeau, B Grisolia, J de Mauduit, B Giles, F Omri, M Skarlatos, D Tsoukalas, D Claverie, A
Citation: F. Cristiano et al., Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon, NUCL INST B, 178, 2001, pp. 84-88

Authors: Grisolia, J Cristiano, F Ben Assayag, G Claverie, A
Citation: J. Grisolia et al., Kinetic aspects of the growth of platelets and voids in H implanted Si, NUCL INST B, 178, 2001, pp. 160-164

Authors: Levine, SR Brott, T Broderick, J Kothari, R O'Donoghue, M Barsan, W Tomsick, T Spilker, J Miller, R Sauerbeck, L Farrell, J Kelly, J Perkins, T Hospital, MU McDonald, T Rorick, M Hickey, C Armitage, J Perry, C Thalinger, K Rhude, R Schill, J Becker, PS Heath, RS Adams, D Reed, R Klei, M Hughes, A Anthony, J Baudendistel, D Zadicoff, C Rymer, M Bettinger, I Laubinger, P Schmerler, M Lyden, P Dunford, J Zivin, J Rapp, K Babcock, T Daum, P Persona, D Brody, M Jackson, C Lewis, S Liss, J Mahdavi, Z Rothrock, J Tom, T Zweifler, R Kobayashi, R Kunin, J Licht, J Rowen, R Stein, D Grisolia, J Martin, F Chaplin, E Kaplitz, N Nelson, J Neuron, A Silver, D Chippendale, T Diamond, E Lobatz, M Murphy, D Rosenberg, D Ruel, T Sadoff, M Schim, J Schleirner, J Atkinson, R Wentworth, D Cummings, R Frink, R Heublein, P Grotta, JC DeGraba, T Fisher, M Ramirez, A Hanson, S Morgenstern, L Sills, C Pasteur, W Yatsu, F Andrews, K Villar-Cordova, C Pepe, P Bratina, P Greenberg, L Rozek, S Simmons, K Kwaitkowski, TG Horowitz, SH Libman, R Kanner, R Silverman, R LaMantia, J Mealie, C Duarte, R Donnarumma, R Okola, M Cullin, V Mitchell, E Levine, SR Lewandowski, CA Tokarski, G Ramadan, NM Mitsias, P Gorman, M Zarowitz, B Kokkinos, J Dayno, J Verro, P Gymnopoulos, C Dafer, R D'Olhaberriague, L Sawaya, K Daley, S Mitchell, M Frankel, M Mackey, B Weissman, J Washington, J Nguyen, B Cook, A Karp, H Williams, M Williamson, T Barch, C Braimah, J Faherty, B MacDonald, J Sailor, S Kozinn, M Hellwick, L Haley, EC Bleck, TP Cail, WS Lindbeck, GH Granner, MA Wolf, SS Gwynn, MW Mellelal, RW Chang, CWJ Solenski, NJ Brock, DG Ford, GF Kongable, GL Parks, KN Wilkinson, SS Davis, MK Sheppard, GL Zontine, DW Gustin, KH Crowe, MN Massey, SL Meyer, M Gaines, K Payne, A Bales, C Malcolm, J Barlow, R Wilson, M Cape, C Bertorini, T Misulis, K Paulsen, W Shepard, D Tilley, BC Welch, KMA Fagan, SC Lu, M Patel, S Masha, E Verter, J Boura, J Main, J Gordon, L Maddy, N Chociemski, T Windham, J Zadeh, HS Alves, W Keller, MF Wenzel, JR Raman, N Cantwell, L Warren, A Smith, K Bailey, E Welch, KMA Froehlich, J Breed, J Easton, JD Hallenbeck, JF Lan, G Marsh, JD Walker, MD Marler, JR
Citation: Sr. Levine et al., Effect of intravenous recombinant tissue plasminogen activator on ischemicstroke lesion size measured by computed tomography, STROKE, 31(12), 2000, pp. 2912-2919

Authors: Grisolia, J Cristiano, F De Mauduit, B Ben Assayag, G Letertre, F Aspar, B Di Cioccio, L Claverie, A
Citation: J. Grisolia et al., Kinetic aspects of the growth of hydrogen induced platelets in SiC, J APPL PHYS, 87(12), 2000, pp. 8415-8419

Authors: Cristiano, F Grisolia, J Colombeau, B Omri, M de Mauduit, B Claverie, A Giles, LF Cowern, NEB
Citation: F. Cristiano et al., Formation energies and relative stability of perfect and faulted dislocation loops in silicon, J APPL PHYS, 87(12), 2000, pp. 8420-8428

Authors: Grisolia, J Ben Assayag, G Claverie, A Aspar, B Lagahe, C Laanab, L
Citation: J. Grisolia et al., A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si, APPL PHYS L, 76(7), 2000, pp. 852-854

Authors: Gimbert, J Billon, T Ouisse, T Grisolia, J Ben-Assayag, G Jaussaud, C
Citation: J. Gimbert et al., Nitrogen implantation in 4H and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 368-372

Authors: Grisolia, J de Mauduit, B Gimbert, J Billon, T Ben Assayag, G Bourgerette, C Claverie, A
Citation: J. Grisolia et al., TEM studies of the defects introduced by ion implantation in SiC, NUCL INST B, 147(1-4), 1999, pp. 62-67
Risultati: 1-9 |