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Results: 1-11 |
Results: 11
Annealing behavior of luminescence from erbium-implanted GaN films
Authors: Zavada, JM Ellis, CJ Lin, JY Jiang, HX Seo, JT Hommerich, U Thaik, M Wilson, RG Grudowski, PA Dupuis, RD
Citation: Jm. Zavada et al., Annealing behavior of luminescence from erbium-implanted GaN films, MAT SCI E B, 81(1-3), 2001, pp. 127-131
Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1-xN photodetector
Authors: Li, T Carrano, JC Eiting, CJ Grudowski, PA Lambert, DJH Kwon, HK Dupuis, RD Campbell, JC
Citation: T. Li et al., Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1-xN photodetector, FIBER IN OP, 20(2), 2001, pp. 125-131
Improved detection of the invisible
Authors: Carrano, JC Li, T Grudowski, PA Dupuis, RD Campbell, JC
Citation: Jc. Carrano et al., Improved detection of the invisible, IEEE CIRC D, 15(5), 1999, pp. 15-24
Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts
Authors: Shiojima, K Woodall, JM Eiting, CJ Grudowski, PA Dupuis, RD
Citation: K. Shiojima et al., Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts, J VAC SCI B, 17(5), 1999, pp. 2030-2033
Growth of III-N materials and devices by metalorganic chemical vapor deposition
Authors: Dupuis, RD Grudowski, PA Eiting, CJ Park, J
Citation: Rd. Dupuis et al., Growth of III-N materials and devices by metalorganic chemical vapor deposition, SEMICONDUCT, 33(9), 1999, pp. 965-969
Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN
Authors: Shiojima, K McInturff, DT Woodall, JM Grudowski, PA Eiting, CJ Dupuis, RD
Citation: K. Shiojima et al., Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN, J ELEC MAT, 28(3), 1999, pp. 228-233
Activation of silicon ion-implanted gallium nitride by furnace annealing
Authors: Dupuis, RD Eiting, CJ Grudowski, PA Hsia, H Tang, Z Becher, D Kuo, H Stillman, GE Feng, M
Citation: Rd. Dupuis et al., Activation of silicon ion-implanted gallium nitride by furnace annealing, J ELEC MAT, 28(3), 1999, pp. 319-324
Optical transitions in Pr-implanted GaN
Authors: Zavada, JM Mair, RA Ellis, CJ Lin, JY Jiang, HX Wilson, RG Grudowski, PA Dupuis, RD
Citation: Jm. Zavada et al., Optical transitions in Pr-implanted GaN, APPL PHYS L, 75(6), 1999, pp. 790-792
Electroluminescence at GaN and GaxIn1-xN electrodes in aqueous electrolytes
Authors: Hung, CJ Halaoui, LI Bard, AJ Grudowski, PA Dupuis, RD Molstad, J DiSalvo, FJ
Citation: Cj. Hung et al., Electroluminescence at GaN and GaxIn1-xN electrodes in aqueous electrolytes, EL SOLID ST, 1(3), 1998, pp. 142-144
Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition
Authors: Dupuis, RD Park, J Grudowski, PA Eiting, CJ Liliental-Weber, Z
Citation: Rd. Dupuis et al., Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition, J CRYST GR, 195(1-4), 1998, pp. 340-345
Activation studies of low-dose Si implants in gallium nitride
Authors: Eiting, CJ Grudowski, PA Dupuis, RD Hsia, H Tang, Z Becher, D Kuo, H Stillman, GE Feng, M
Citation: Cj. Eiting et al., Activation studies of low-dose Si implants in gallium nitride, APPL PHYS L, 73(26), 1998, pp. 3875-3877
Risultati: 1-11 |