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Results: 3
SiGe heterojunction bipolar transistor with 213GHz f(T) at 77K
Authors:
Zerounian, N Aniel, F Adde, R Gruhle, A
Citation:
N. Zerounian et al., SiGe heterojunction bipolar transistor with 213GHz f(T) at 77K, ELECTR LETT, 36(12), 2000, pp. 1076-1078
Collector-up SiGe heterojunction bipolar transistors
Authors:
Gruhle, A Kibbel, H Mahner, C Mroczek, W
Citation:
A. Gruhle et al., Collector-up SiGe heterojunction bipolar transistors, IEEE DEVICE, 46(7), 1999, pp. 1510-1513
The reduction of base dopant outdiffusion in SiGe heterojunction bipolar transistors by carbon doping
Authors:
Gruhle, A Kibbel, H Konig, U
Citation:
A. Gruhle et al., The reduction of base dopant outdiffusion in SiGe heterojunction bipolar transistors by carbon doping, APPL PHYS L, 75(9), 1999, pp. 1311-1313
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