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Citation: R. Wolf et al., Low-temperature ICPECVD of silicon nitride in SiH4-NH3-Ar discharges analyzed by spectroscopic ellipsometry and etch behavior in KOH and BHF, SURF COAT, 142, 2001, pp. 786-791

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Citation: G. Dittmar et B. Gruska, Characterisation of epitaxial layers on silicon by spectroscopic ellipsometry, MAT SCI E B, 73(1-3), 2000, pp. 255-259

Authors: Gruska, B

Citation: B. Gruska, Ellipsometric analysis of polysilicon layers, THIN SOL FI, 364(1-2), 2000, pp. 138-143

Authors: Bukkems, HG Oei, YS Richter, U Gruska, B

Citation: Hg. Bukkems et al., Analysis of III-V layer stacks on INP substrates using spectroscopic ellipsometry in the NIR spectral range, THIN SOL FI, 364(1-2), 2000, pp. 165-170