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Results:
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Results: 13
Authors:
Vdovin, VI
Gutakovskii, AK
Nikolaev, YA
Mil'vidski, MG
Citation: Vi. Vdovin et al., Formation of structural defects in silicon wafers implanted with high energy Er ions, IAN FIZ, 65(2), 2001, pp. 280-284
Authors:
Bolkhovityanov, YB
Gutakovskii, AK
Mashanov, VI
Pchelyakov, OP
Revenko, MA
Sokolov, LV
Citation: Yb. Bolkhovityanov et al., Solid solutions GeSi grown by MBE on a low temperature Si(001) buffer layer: specific features of plastic relaxation, THIN SOL FI, 392(1), 2001, pp. 98-106
Authors:
Stenina, NG
Gubareva, DB
Gutakovskii, AK
Plyasova, LM
Citation: Ng. Stenina et al., Crystal chemical features of vein quartz from the Saralinsk deposit as an indicator of the productivity of gold mineralization (Kuznetsk Alatau, Russia), GEOL ORE D, 42(1), 2000, pp. 47-56
Authors:
Vorob'ev, AB
Gutakovskii, AK
Prinz, VY
Seleznev, VA
Citation: Ab. Vorob'Ev et al., Preparation of monolayers of nanoparticles for transmission electron microscopy, TECH PHYS, 45(6), 2000, pp. 783-785
Authors:
Antonova, IV
Stas', VF
Popov, VP
Obodnikov, VI
Gutakovskii, AK
Citation: Iv. Antonova et al., Electrical conductivity of silicon-on-insulator structures prepared by bonding silicon wafers to a substrate using hydrogen implantation, SEMICONDUCT, 34(9), 2000, pp. 1054-1057
Authors:
Kachurin, GA
Yanovskaya, SG
Ruault, MO
Gutakovskii, AK
Zhuravlev, KS
Kaitasov, O
Bernas, H
Citation: Ga. Kachurin et al., The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers, SEMICONDUCT, 34(8), 2000, pp. 965-970
Authors:
Popov, VP
Antonova, IV
Stas, VF
Gutakovskii, AK
Spesivtsev, EV
Mardegzhov, AS
Franznusov, AA
Feofanov, GN
Citation: Vp. Popov et al., Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology, MAT SCI E B, 73(1-3), 2000, pp. 82-86
Authors:
Antonova, IV
Popov, VP
Stas, VF
Gutakovskii, AK
Plotnikov, AE
Obodnikov, VI
Citation: Iv. Antonova et al., Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology, MICROEL ENG, 48(1-4), 1999, pp. 383-386
Authors:
Gutakovskii, AK
Pokrovskii, LD
Repinskii, SM
Sveshnikova, LL
Citation: Ak. Gutakovskii et al., Structure of cadmium and lead sulfide nanoclusters in a matrix of a Langmuir-Blodgett film, J STRUCT CH, 40(3), 1999, pp. 485-487
Authors:
Tenne, DA
Gaisler, VA
Bakarov, AK
Toropov, AI
Gutakovskii, AK
Shebanin, AP
Zahn, DRT
Citation: Da. Tenne et al., Optical phonons in nanosize GaAs and AlAs clusters in an InAs matrix, JETP LETTER, 70(7), 1999, pp. 469-475
Authors:
Yakimov, AI
Dvurechenskii, AV
Proskuryakov, YY
Nikiforov, AI
Pchelyakov, OP
Teys, SA
Gutakovskii, AK
Citation: Ai. Yakimov et al., Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots, APPL PHYS L, 75(10), 1999, pp. 1413-1415
Authors:
Gutakovskii, AK
Katkov, AV
Katkov, MI
Pchelyakov, OP
Revenko, MA
Citation: Ak. Gutakovskii et al., Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system, TECH PHYS L, 24(12), 1998, pp. 949-951
Authors:
Kachurin, GA
Leier, AF
Zhuravlev, KS
Tyschenko, IE
Gutakovskii, AK
Volodin, VA
Skorupa, W
Yankov, RA
Citation: Ga. Kachurin et al., Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions, SEMICONDUCT, 32(11), 1998, pp. 1222-1228
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