AAAAAA

   
Results: 1-11 |
Results: 11
Self-assembled islands in the (Ga,Al)As/InAs heteroepitaxial system studied by Raman spectroscopy
Authors: Tenne, DA Haisler, VA Bakarov, AK Toropov, AI Gutakovsky, AK Shebanin, AP Zahn, DRT
Citation: Da. Tenne et al., Self-assembled islands in the (Ga,Al)As/InAs heteroepitaxial system studied by Raman spectroscopy, PHYS ST S-B, 224(1), 2001, pp. 25-29
Fabrication of conducting GeSi/Si micro- and nanotubes and helical microcoils
Authors: Golod, SV Prinz, VY Mashanov, VI Gutakovsky, AK
Citation: Sv. Golod et al., Fabrication of conducting GeSi/Si micro- and nanotubes and helical microcoils, SEMIC SCI T, 16(3), 2001, pp. 181-185
Ellipsometry and microscopy study of nanocrystalline Si : H layers formed by high dose implantation of silicon
Authors: Popov, VP Antonova, IV Gutakovsky, AK Spesivtsev, EV Morosov, II
Citation: Vp. Popov et al., Ellipsometry and microscopy study of nanocrystalline Si : H layers formed by high dose implantation of silicon, MAT SCI E B, 73(1-3), 2000, pp. 120-123
Stress relaxation by generation of L-shape misfit dislocations in (001) heterostructures with diamond and sphalerite lattices
Authors: Kolesnikov, AV Vasilenko, AP Trukhanov, EM Gutakovsky, AK
Citation: Av. Kolesnikov et al., Stress relaxation by generation of L-shape misfit dislocations in (001) heterostructures with diamond and sphalerite lattices, APPL SURF S, 166(1-4), 2000, pp. 57-60
Raman study of self-assembled GaAs and AlAs islands embedded in InAs
Authors: Tenne, DA Haisler, VA Toropov, AI Bakarov, AK Gutakovsky, AK Zahn, DRT Shebanin, AP
Citation: Da. Tenne et al., Raman study of self-assembled GaAs and AlAs islands embedded in InAs, PHYS REV B, 61(20), 2000, pp. 13785-13790
Cleavage of thin films for X-HREM study of interface quality in heterostructures
Authors: Vorob'ev, AB Gutakovsky, AK Prinz, VY
Citation: Ab. Vorob'Ev et al., Cleavage of thin films for X-HREM study of interface quality in heterostructures, J CRYST GR, 210(1-3), 2000, pp. 182-186
Study of strain relaxation in InAs/GaAs strained-layer superlattices by Raman spectroscopy and electron microscopy
Authors: Gutakovsky, AK Pintus, SM Toropov, AI Moshegov, NT Haisler, VA Rubanov, S Munroe, P
Citation: Ak. Gutakovsky et al., Study of strain relaxation in InAs/GaAs strained-layer superlattices by Raman spectroscopy and electron microscopy, AUST J PHYS, 53(5), 2000, pp. 697-705
Interface corrugation in GaAs/AlAs (311)A superlattices
Authors: Vorob'ev, AB Gutakovsky, AK Prinz, VY Preobrazhenskii, VV Putyato, MA
Citation: Ab. Vorob'Ev et al., Interface corrugation in GaAs/AlAs (311)A superlattices, APPL PHYS L, 77(19), 2000, pp. 2976-2978
The epitaxy of silicon and germanium-silicon films on porous Si
Authors: Gutakovsky, AK Romanov, SI Pchelyakov, OP Mashanov, VI Sokolov, LV Larichkin, IV
Citation: Ak. Gutakovsky et al., The epitaxy of silicon and germanium-silicon films on porous Si, IAN FIZ, 63(2), 1999, pp. 255-261
Light particle irradiation effects in Si nanocrystals
Authors: Kachurin, GA Ruault, MO Gutakovsky, AK Kaitasov, O Yanovskaya, SG Zhuravlev, KS Bernas, H
Citation: Ga. Kachurin et al., Light particle irradiation effects in Si nanocrystals, NUCL INST B, 147(1-4), 1999, pp. 356-360
Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001)
Authors: Gutakovsky, AK Katkov, AV Katkov, MI Pchelyakov, OP Revenko, MA
Citation: Ak. Gutakovsky et al., Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001), J CRYST GR, 202, 1999, pp. 232-235
Risultati: 1-11 |