Authors: Averkiev, NS Gutkin, AA Sedov, VE

Citation: Ns. Averkiev et al., Photoluminescence of CuGaTeAs and CuGaSnGa complexes in n-GaAs under resonance polarized excitation, SEMICONDUCT, 35(2), 2001, pp. 170-174

Authors: Averkiev, NS Gutkin, AA Il'inskii, SY

Citation: Ns. Averkiev et al., Influence of the relative magnitude of the Jahn-Teller effect and level splitting in a cubic crystal field on the properties of the ground state of vacancy defects in semiconductors, PHYS SOL ST, 42(7), 2000, pp. 1231-1235

Authors: Gutkin, AA Reshchikov, MA Sedov, VE

Citation: Aa. Gutkin et al., Comparison of the polarizations of the 1.2-eV photoluminescence band in n-GaAs : Te under uniaxial pressure and resonance polarized excitation, SEMICONDUCT, 34(10), 2000, pp. 1151-1156

Authors: Averkiev, NS Gutkin, AA Reshchikov, MA

Citation: Ns. Averkiev et al., Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain, SEMICONDUCT, 33(11), 1999, pp. 1196-1201

Authors: Gutkin, AA Reshchikov, MA Sedov, VE

Citation: Aa. Gutkin et al., Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}-Sn-Ga(Si-Ga) complexes in GaAs produced as a result of resonant polarized excitation, SEMICONDUCT, 33(1), 1999, pp. 37-40

Authors: Averkiev, NS Gutkin, AA Il'inskii, SY

Citation: Ns. Averkiev et al., Electric-field and interface effects on the orientation of Jahn-Teller vacancy distortions in semiconductors, PHYS SOL ST, 40(12), 1998, pp. 1958-1961