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Results: 1-12 |
Results: 12
MECHANICAL LITHOGRAPHY USING A SINGLE-POINT DIAMOND MACHINING
Authors: GOSS SH GRAZULIS L TOMICH DH EYINK KG WALCK SD HAAS TW THOMAS DR LAMPERT WV
Citation: Sh. Goss et al., MECHANICAL LITHOGRAPHY USING A SINGLE-POINT DIAMOND MACHINING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1439-1445
CHARACTERIZATION OF LOW-TEMPERATURE-GROWN ALSB AND GASB BUFFER LAYERS
Authors: EYINK KG SEAFORD ML HAAS TW TOMICH DH LAMPERT WV WALCK SD SOLOMON JS MITCHEL WC EASTMAN LF
Citation: Kg. Eyink et al., CHARACTERIZATION OF LOW-TEMPERATURE-GROWN ALSB AND GASB BUFFER LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1187-1190
A COMPARISON OF THE CRITICAL THICKNESS FOR MBE GROWN LT-GAAS DETERMINED BY IN-SITU ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY
Authors: EYINK KG CAPANO MA WALCK SD HAAS TW STREETMAN BG
Citation: Kg. Eyink et al., A COMPARISON OF THE CRITICAL THICKNESS FOR MBE GROWN LT-GAAS DETERMINED BY IN-SITU ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of electronic materials, 26(4), 1997, pp. 391-396
INTERFACIAL REACTIONS IN THE FORMATION OF OHMIC CONTACTS TO WIDE BANDGAP SEMICONDUCTORS
Authors: HOLLOWAY PH KIM TJ TREXLER JT MILLER S FIJOL JJ LAMPERT WV HAAS TW
Citation: Ph. Holloway et al., INTERFACIAL REACTIONS IN THE FORMATION OF OHMIC CONTACTS TO WIDE BANDGAP SEMICONDUCTORS, Applied surface science, 117, 1997, pp. 362-372
USE OF OPTICAL-FIBER PYROMETRY IN MOLECULAR-BEAM EPITAXY
Authors: EYINK KG PATTERSON JK ADAMS SJ HAAS TW LAMPERT WV
Citation: Kg. Eyink et al., USE OF OPTICAL-FIBER PYROMETRY IN MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 262-266
IN-SITU AND EX-SITU SPECTROSCOPIC INVESTIGATION OF LOW-TEMPERATURE-GROWN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY
Authors: EYINK KG CAPANO MA WALCK SD HAAS TW STREETMAN BG
Citation: Kg. Eyink et al., IN-SITU AND EX-SITU SPECTROSCOPIC INVESTIGATION OF LOW-TEMPERATURE-GROWN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2278-2281
METALLURGY OF AL-NI-GE OHMIC CONTACT FORMATION ON N-GAAS
Authors: LIN XW LAMPERT WV HAAS TW HOLLOWAY PH LILIENTALWEBER Z SWIDER W WASHBURN J
Citation: Xw. Lin et al., METALLURGY OF AL-NI-GE OHMIC CONTACT FORMATION ON N-GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2081-2091
SULFUR PASSIVATION OF ALXGA1-XAS FOR OHMIC CONTACT FORMATION
Authors: FISCHER V RISTOLAINEN E HOLLOWAY PH LAMPERT WV HAAS TW
Citation: V. Fischer et al., SULFUR PASSIVATION OF ALXGA1-XAS FOR OHMIC CONTACT FORMATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1103-1107
MORPHOLOGY OF AL-NI-GE OHMIC CONTACTS TO N-GAAS AS A FUNCTION OF CONTACT COMPOSITION
Authors: LIN XW LAMPERT WV SWIDER W HAAS TW HOLLOWAY PH WASHBURN J LILIENTALWEBER Z
Citation: Xw. Lin et al., MORPHOLOGY OF AL-NI-GE OHMIC CONTACTS TO N-GAAS AS A FUNCTION OF CONTACT COMPOSITION, Thin solid films, 253(1-2), 1994, pp. 490-495
IN-SITU ELLIPSOMETRIC STUDY OF AS CAPPING AND LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GAAS GROWTH AND IMPLICATIONS FOR THE LOW-TEMPERATURE CRITICAL THICKNESS
Authors: EYINK KG CONG YS GILBERT R CAPANO MA HAAS TW STREETMAN BG
Citation: Kg. Eyink et al., IN-SITU ELLIPSOMETRIC STUDY OF AS CAPPING AND LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GAAS GROWTH AND IMPLICATIONS FOR THE LOW-TEMPERATURE CRITICAL THICKNESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1423-1426
OBSERVATION OF LOW-T GAAS GROWTH REGIMES BY REAL-TIME ELLIPSOMETRY
Authors: EYINK KG CONG YS CAPANO MA HAAS TW GILBERT RA STREETMAN BG
Citation: Kg. Eyink et al., OBSERVATION OF LOW-T GAAS GROWTH REGIMES BY REAL-TIME ELLIPSOMETRY, Journal of electronic materials, 22(12), 1993, pp. 1387-1390
LONG-DURATION EXPOSURE FACILITY - PRELIMINARY-OBSERVATIONS OF THE EFFECTS OF LOW-EARTH-ORBIT ON MGF2, THF4 AND SIO2 OPTICAL-MATERIALS
Authors: JOHN PJ DAY AE HAAS TW TRUMBLE TM
Citation: Pj. John et al., LONG-DURATION EXPOSURE FACILITY - PRELIMINARY-OBSERVATIONS OF THE EFFECTS OF LOW-EARTH-ORBIT ON MGF2, THF4 AND SIO2 OPTICAL-MATERIALS, Surface and interface analysis, 20(6), 1993, pp. 531-534
Risultati: 1-12 |