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Results: 1-7 |
Results: 7
LOW-TEMPERATURE (LESS-THAN-450-DEGREES-C), PLASMA-ASSISTED DEPOSITIONOF POLY-SI THIN-FILMS ON SIO2 AND GLASS THROUGH INTERFACE ENGINEERING(VOL 15, PG 1035, 1997)
Authors: WOLFE DM WANG F HABERMEHL S LUCOVSKY G
Citation: Dm. Wolfe et al., LOW-TEMPERATURE (LESS-THAN-450-DEGREES-C), PLASMA-ASSISTED DEPOSITIONOF POLY-SI THIN-FILMS ON SIO2 AND GLASS THROUGH INTERFACE ENGINEERING(VOL 15, PG 1035, 1997), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 207-207
STRESS-RELAXATION IN SI-RICH SILICON-NITRIDE THIN-FILMS
Authors: HABERMEHL S
Citation: S. Habermehl, STRESS-RELAXATION IN SI-RICH SILICON-NITRIDE THIN-FILMS, Journal of applied physics, 83(9), 1998, pp. 4672-4677
THE FRANKFURT BIOSPHERE MODEL - A GLOBAL PROCESS-ORIENTED MODEL OF SEASONAL AND LONG-TERM CO2 EXCHANGE BETWEEN TERRESTRIAL ECOSYSTEMS AND THE ATMOSPHERE .2. GLOBAL RESULTS FOR POTENTIAL VEGETATION IN AN ASSUMED EQUILIBRIUM STATE
Authors: KOHLMAIER GH BADECK FW OTTO RD HAGER C DONGES S KINDERMANN J WURTH G LANG T JAKEL U NADLER A RAMGE P KLAUDIUS A HABERMEHL S LUDEKE MKB
Citation: Gh. Kohlmaier et al., THE FRANKFURT BIOSPHERE MODEL - A GLOBAL PROCESS-ORIENTED MODEL OF SEASONAL AND LONG-TERM CO2 EXCHANGE BETWEEN TERRESTRIAL ECOSYSTEMS AND THE ATMOSPHERE .2. GLOBAL RESULTS FOR POTENTIAL VEGETATION IN AN ASSUMED EQUILIBRIUM STATE, Climate research, 8(1), 1997, pp. 61-87
ION-SURFACE INTERACTIONS IN LOW-TEMPERATURE SILICON EPITAXY BY REMOTEPLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: HABERMEHL S LUCOVSKY G
Citation: S. Habermehl et G. Lucovsky, ION-SURFACE INTERACTIONS IN LOW-TEMPERATURE SILICON EPITAXY BY REMOTEPLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3024-3032
INTERRUPTED CYCLE CHEMICAL BEAM EPITAXY OF GALLIUM-PHOSPHIDE ON SILICON WITH OR WITHOUT PHOTON ASSISTANCE
Authors: KELLIHER JT MILLER AE DIETZ N HABERMEHL S CHEN YL LU Z LUCOVSKY G BACHMANN KJ
Citation: Jt. Kelliher et al., INTERRUPTED CYCLE CHEMICAL BEAM EPITAXY OF GALLIUM-PHOSPHIDE ON SILICON WITH OR WITHOUT PHOTON ASSISTANCE, Applied surface science, 86(1-4), 1995, pp. 453-456
HETEROEPITAXIAL GROWTH OF SI ON GAP AND GAAS-SURFACES BY REMOTE, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: HABERMEHL S DIETZ N LU Z BACHMANN KJ LUCOVSKY G
Citation: S. Habermehl et al., HETEROEPITAXIAL GROWTH OF SI ON GAP AND GAAS-SURFACES BY REMOTE, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 990-994
STRUCTURE OF A GLOBAL AND SEASONAL CARBON EXCHANGE MODEL FOR THE TERRESTRIAL BIOSPHERE - THE FRANKFURT BIOSPHERE MODEL (FBM)
Authors: KINDERMANN J LUDEKE MKB BADECK FW OTTO RD KLAUDIUS A HAGER C WURTH G LANG T DONGES S HABERMEHL S KOHLMAIER GH
Citation: J. Kindermann et al., STRUCTURE OF A GLOBAL AND SEASONAL CARBON EXCHANGE MODEL FOR THE TERRESTRIAL BIOSPHERE - THE FRANKFURT BIOSPHERE MODEL (FBM), Water, air and soil pollution, 70(1-4), 1993, pp. 675-684
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