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Results:
1-7
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Results: 7
Authors:
NATAF G
BEAUMONT B
BOUILLE A
HAFFOUZ S
VAILLE M
GIBART P
Citation: G. Nataf et al., LATERAL OVERGROWTH OF HIGH-QUALITY GAN LAYERS ON GAN AL2O3 PATTERNED SUBSTRATES BY HALIDE VAPOR-PHASE EPITAXY/, Journal of crystal growth, 192(1-2), 1998, pp. 73-78
Authors:
BEAUMONT B
GIBART P
VAILLE M
HAFFOUZ S
NATAF G
BOUILLE A
Citation: B. Beaumont et al., LATERAL OVERGROWTH OF GAN ON PATTERNED GAN SAPPHIRE SUBSTRATE VIA SELECTIVE METAL-ORGANIC VAPOR-PHASE EPITAXY - A ROUTE TO PRODUCE SELF SUPPORTED GAN SUBSTRATES/, Journal of crystal growth, 190, 1998, pp. 97-102
INFLUENCE OF IN-SITU SAPPHIRE SURFACE PREPARATION AND CARRIER GAS ON THE GROWTH MODE OF GAN IN MOVPE
Authors:
VENNEGUES P
BEAUMONT B
HAFFOUZ S
VAILLE M
GIBART P
Citation: P. Vennegues et al., INFLUENCE OF IN-SITU SAPPHIRE SURFACE PREPARATION AND CARRIER GAS ON THE GROWTH MODE OF GAN IN MOVPE, Journal of crystal growth, 187(2), 1998, pp. 167-177
Authors:
BEAUMONT B
HAFFOUZ S
GIBART P
Citation: B. Beaumont et al., MAGNESIUM INDUCED CHANGES IN THE SELECTIVE GROWTH OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 72(8), 1998, pp. 921-923
Authors:
MONROY E
CALLE F
ANGULO C
VILA P
SANZ A
GARRIDO JA
CALLEJA E
MUNOZ E
HAFFOUZ S
BEAUMONT B
OMNES F
GIBART P
Citation: E. Monroy et al., GAN-BASED SOLAR-ULTRAVIOLET DETECTION INSTRUMENT, Applied optics, 37(22), 1998, pp. 5058-5062
Authors:
LEROUX M
BEAUMONT B
GRANDJEAN N
LORENZINI P
HAFFOUZ S
VENNEGUES P
MASSIES J
GIBART P
Citation: M. Leroux et al., LUMINESCENCE AND REFLECTIVITY STUDIES OF UNDOPED, N-DOPED AND P-DOPEDGAN ON (0001)SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 97-104
Authors:
BEAUMONT B
HAFFOUZ S
GIBART P
LEROUX M
LORENZINI P
CALLEJA E
MUNOZ E
Citation: B. Beaumont et al., VIOLET GAN BASED LIGHT-EMITTING-DIODES FABRICATED BY METAL ORGANICS VAPOR-PHASE EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 296-301
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