G. Nataf et al., LATERAL OVERGROWTH OF HIGH-QUALITY GAN LAYERS ON GAN AL2O3 PATTERNED SUBSTRATES BY HALIDE VAPOR-PHASE EPITAXY/, Journal of crystal growth, 192(1-2), 1998, pp. 73-78
The growth of GaN thick layers by halide vapour-phase epitaxy (HVPE) o
n metalorganic vapour-phase epitaxy (MOVPE)-GaN/Al2O3, substrates is r
eported. In a first step, we have shown that lateral overgrowth was en
hanced following preferential crystallographic directions. Double crys
tal X-ray diffraction (DCXRD) assessment in omega scan showed full-wid
th at half-maximum (FWHM) as small as 50 arcsec. On the way towards th
e realisation of self-supported GaN substrates, the present study was
extended to epitaxial lateral overgrowth (ELOG) on large surface GaN/A
l2O3 patterned substrates to achieve coalescence. Structural, electric
al and optical characterisation of such layers was performed, underlin
ing the promising quality of these materials. (C) 1998 Elsevier Scienc
e B.V. All rights reserved.