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Results: 1-8 |
Results: 8
COMPARISON OF OHMIC METALLIZATION SCHEMES FOR INGAALN
Authors: REN F VARTULI CB PEARTON SJ ABERNATHY CR DONOVAN SM MACKENZIE JD SHUL RJ ZOLPER JC LOVEJOY ML BACA AG HAGEROTTCRAWFORD M JONES KA
Citation: F. Ren et al., COMPARISON OF OHMIC METALLIZATION SCHEMES FOR INGAALN, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 802-806
CONDUCTION MECHANISMS IN W AND WSIX OHMIC CONTACTS TO INGAN AND INN
Authors: VARTULI CB PEARTON SJ ABERNATHY CR MACKENZIE JD LOVEJOY ML SHUL RJ ZOLPER JC BACA AG HAGEROTTCRAWFORD M JONES A REN F
Citation: Cb. Vartuli et al., CONDUCTION MECHANISMS IN W AND WSIX OHMIC CONTACTS TO INGAN AND INN, Solid-state electronics, 41(4), 1997, pp. 531-534
THERMAL-STABILITY OF W, WSIX, AND TI AL OHMIC CONTACTS TO INGAN, INN,AND INALN/
Authors: VARTULI CB PEARTON SJ ABERNATHY CR MACKENZIE JD SHUL RJ ZOLPER JC LOVEJOY ML BACA AG HAGEROTTCRAWFORD M
Citation: Cb. Vartuli et al., THERMAL-STABILITY OF W, WSIX, AND TI AL OHMIC CONTACTS TO INGAN, INN,AND INALN/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3520-3522
ETCHING PROCESSES FOR FABRICATION OF GAN INGAN/ALN MICRODISK LASER STRUCTURES/
Authors: LEE JW VARTULI CB ABERNATHY CR MACKENZIE JD MILEHAM JR PEARTON SJ SHUL RJ ZOLPER JC HAGEROTTCRAWFORD M ZAVADA JM WILSON RG SCHWARTZ RN
Citation: Jw. Lee et al., ETCHING PROCESSES FOR FABRICATION OF GAN INGAN/ALN MICRODISK LASER STRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3637-3640
PROCESS-DEVELOPMENT FOR III-V NITRIDES
Authors: PEARTON SJ ABERNATHY CR REN F SHUL RJ KILCOYNE SP HAGEROTTCRAWFORD M ZOLPER JC WILSON RG SCHWARTZ RG ZAVADA JM
Citation: Sj. Pearton et al., PROCESS-DEVELOPMENT FOR III-V NITRIDES, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 138-146
HIGH-DENSITY PLASMA-ETCHING OF III-V NITRIDES
Authors: VARTULI CB PEARTON SJ ABERNATHY CR SHUL RJ HOWARD AJ KILCOYNE SP PARMETER JE HAGEROTTCRAWFORD M
Citation: Cb. Vartuli et al., HIGH-DENSITY PLASMA-ETCHING OF III-V NITRIDES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1011-1014
GROWTH AND FABRICATION OF GAN-INGAN MICRODISK LASER STRUCTURES
Authors: ABERNATHY CR PEARTON SJ MACKENZIE JD MILEHAM JR BHARATAN SR KRISHNAMOORTHY V JONES KS HAGEROTTCRAWFORD M SHUL RJ KILCOYNE SP ZAVADA JM ZHANG D KOLBAS RM
Citation: Cr. Abernathy et al., GROWTH AND FABRICATION OF GAN-INGAN MICRODISK LASER STRUCTURES, Solid-state electronics, 39(2), 1996, pp. 311-313
GAINASP ALGAINP-BASED NEAR-IR (780NM) VERTICAL-CAVITY SURFACE-EMITTING LASERS/
Authors: SCHNEIDER RP HAGEROTTCRAWFORD M
Citation: Rp. Schneider et M. Hagerottcrawford, GAINASP ALGAINP-BASED NEAR-IR (780NM) VERTICAL-CAVITY SURFACE-EMITTING LASERS/, Electronics Letters, 31(7), 1995, pp. 554-556
Risultati: 1-8 |