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Results: 3
SILICON NPN BIPOLAR-TRANSISTORS WITH INDIUM-IMPLANTED BASE REGIONS
Authors: KIZILYALLI IC CHEN AS NAGY WJ RICH TL HAM TE LEE KH CARROLL MS IANNUZZI M
Citation: Ic. Kizilyalli et al., SILICON NPN BIPOLAR-TRANSISTORS WITH INDIUM-IMPLANTED BASE REGIONS, IEEE electron device letters, 18(3), 1997, pp. 120-122
ACCURATE BASE AND COLLECTOR CURRENT MODELING OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS - QUANTIFICATION OF HOLE SURFACE RECOMBINATION VELOCITY
Authors: KIZILYALLI IC RAMBAUD MM HAM TE STEVIE FA KAHORA PM ZANESKI G THOMA MJ BOULIN DM
Citation: Ic. Kizilyalli et al., ACCURATE BASE AND COLLECTOR CURRENT MODELING OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS - QUANTIFICATION OF HOLE SURFACE RECOMBINATION VELOCITY, Journal of applied physics, 79(5), 1996, pp. 2738-2744
PREDICTIVE WORST CASE STATISTICAL MODELING OF 0.8-MU-M BICMOS BIPOLAR-TRANSISTORS - A METHODOLOGY BASED ON PROCESS AND MIXED DEVICE CIRCUITLEVEL SIMULATORS
Authors: KIZILYALLI IC HAM TE SINGHAL K KEARNEY JW LIN W THOMA MJ
Citation: Ic. Kizilyalli et al., PREDICTIVE WORST CASE STATISTICAL MODELING OF 0.8-MU-M BICMOS BIPOLAR-TRANSISTORS - A METHODOLOGY BASED ON PROCESS AND MIXED DEVICE CIRCUITLEVEL SIMULATORS, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 966-973
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