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Results: 1-4 |
Results: 4
EFFECT OF STRONG ILLUMINATION ON CURRENT-VOLTAGE CHARACTERISTICS OF AU SI, AL/SI AND SN/SI SCHOTTKY BARRIERS WITH NATIVE-OXIDE LAYER/
Authors: HAMDI WI
Citation: Wi. Hamdi, EFFECT OF STRONG ILLUMINATION ON CURRENT-VOLTAGE CHARACTERISTICS OF AU SI, AL/SI AND SN/SI SCHOTTKY BARRIERS WITH NATIVE-OXIDE LAYER/, Journal of materials science. Materials in electronics, 8(6), 1997, pp. 409-418
2-STAGE PHOTOQUENCHING IN AU-SI DIODE WITH NATIVE-OXIDE LAYER ILLUMINATED BY INTENSE LIGHT
Authors: HAMDI WI
Citation: Wi. Hamdi, 2-STAGE PHOTOQUENCHING IN AU-SI DIODE WITH NATIVE-OXIDE LAYER ILLUMINATED BY INTENSE LIGHT, Journal of materials science. Materials in electronics, 8(6), 1997, pp. 419-425
ANALYSIS OF AU SI, AL/SI, AND SN/SI SEMICONDUCTOR-DEVICES WITH THIN OXIDE LAYER BY PHOTOCURRENT MEASUREMENTS/
Authors: HAMDI WI
Citation: Wi. Hamdi, ANALYSIS OF AU SI, AL/SI, AND SN/SI SEMICONDUCTOR-DEVICES WITH THIN OXIDE LAYER BY PHOTOCURRENT MEASUREMENTS/, Thin solid films, 310(1-2), 1997, pp. 177-183
EVALUATION OF THE INTERFACE STATE DENSITY FROM LIGHT-INDUCED EFFECTS ON I-U CHARACTERISTICS OF SCHOTTKY DIODES
Authors: HAMDI WI DARWISH S
Citation: Wi. Hamdi et S. Darwish, EVALUATION OF THE INTERFACE STATE DENSITY FROM LIGHT-INDUCED EFFECTS ON I-U CHARACTERISTICS OF SCHOTTKY DIODES, Physica status solidi. a, Applied research, 143(2), 1994, pp. 457-461
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