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Results:
1-7
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Results: 7
Authors:
HU S
HAMIDI A
ALTMEYER S
KOSTER T
SPANGENBERG B
KURZ H
Citation: S. Hu et al., FABRICATION OF SILICON AND METAL NANOWIRES AND DOTS USING MECHANICAL ATOMIC-FORCE LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2822-2824
Authors:
HU S
ALTMEYER S
HAMIDI A
SPANGENBERG B
KURZ H
Citation: S. Hu et al., NOVEL-APPROACH TO ATOMIC-FORCE LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1983-1986
Authors:
ALTMEYER S
HOFMANN K
HAMIDI A
HU S
SPANGENBERG B
KURZ H
Citation: S. Altmeyer et al., POTENTIAL AND CHALLENGES OF SINGLE-ELECTRON DEVICES, Vacuum, 51(2), 1998, pp. 295-299
Authors:
HAMIDI A
COQUERY G
LALLEMAND R
VALES P
DORKEL JM
Citation: A. Hamidi et al., TEMPERATURE-MEASUREMENTS AND THERMAL MODELING OF HIGH-POWER IGBT MULTICHIP MODULES FOR RELIABILITY INVESTIGATIONS IN TRACTION APPLICATIONS, Microelectronics and reliability, 38(6-8), 1998, pp. 1353-1359
Authors:
HAMIDI A
COQUERY G
Citation: A. Hamidi et G. Coquery, EFFECTS OF CURRENT-DENSITY AND CHIP TEMPERATURE DISTRIBUTION ON LIFETIME OF HIGH-POWER IGBT MODULES IN TRACTION WORKING-CONDITIONS, Microelectronics and reliability, 37(10-11), 1997, pp. 1755-1758
Authors:
ALTMEYER S
HAMIDI A
SPANGENBERG B
KURZ H
Citation: S. Altmeyer et al., 77 K SINGLE-ELECTRON TRANSISTORS FABRICATED WITH 0.1-MU-M TECHNOLOGY, Journal of applied physics, 81(12), 1997, pp. 8118-8120
Authors:
ALTMEYER S
HAMIDI A
SPANGENBERG B
KURZ H
Citation: S. Altmeyer et al., METAL-BASED SINGLE-ELECTRON TRANSISTORS OPERATING AT SEVERAL KELVIN, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4034-4037
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