FABRICATION OF SILICON AND METAL NANOWIRES AND DOTS USING MECHANICAL ATOMIC-FORCE LITHOGRAPHY

novel bilayer resist system consisting of a 3 nm thick titanium (Ti) l ayer on top of a 65 nm thick poly(methylmethacrylate) (PMMA) layer was developed for mechanical nanolithography with the atomic force micros cope. The ultrathin Ti layer allowed 20 nm resolution patterning with conventional silicon cantilevers, provided a proper force-depth calibr ation was performed before lithography. Techniques of pattern transfer were applied to fabricate chromium nanostructures and silicon nanowir es from the patterned Ti/PMMA resist. (C) 1998 American Vacuum Society . [S0734-211X(98)03905-5].